BLU30

BLU30 PHILIPS

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Technical content

Product specification January 1985 DISCRETE SEMICONDUCTORS BLU30/12 UHF power transistor

Philips Semiconductors Product specification UHF power transistor BLU30/12

DESCRIPTION

N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 470 MHz communications band. FEATURES:

• multi-base structure and emitter-ballasting resistors for an optimum temperature profile
• gold metallization ensures excellent reliability
• internal matching to achieve an optimum wideband capability and high power gain The transistor has a 6-lead flange envelope with a ceramic cap (SOT-119). All leads are isolated from the flange. QUICK REFERENCE DATA Envelope SOT-119 Mode of operation class-B; c.w. Collector-emitter voltage (d.c.) V CE 12,5 V Frequency f 470 MHz Load power PL 30 W Power gain G P > 6,0 dB Collector efficiency ηC > 55 % Heatsink temperature T h 25 °C PIN CONFIGURATION Fig.1 Simplified outline, SOT119A. handbook, halfpage MSB006 PINNING PIN DESCRIPTION 1 emitter 2 emitter 3 base 4 collector 5 emitter 6 emitter PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.

Philips Semiconductors Product specification UHF power transistor BLU30/12 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-base voltage (open emitter) peak value V CBOM max. 36 V Collector-emitter voltage (open base) V CEO max. 16,5 V Emitter-base voltage (open collector) V EBO max. 4 V Collector current d.c. or average I C max. 6 A (peak value); f> 1 MHz I CM max. 18 A Total power dissipation f> 1 MHz; Tmb = 25°CP tot(r.f.) max. 65 W Storage temperature T stg −65 to+ 150 °C Operating junction temperature T j max. 200 °C Fig.2 D.C. SOAR. Rth mb-h= 0,2 K/W handbook, halfpage 10−1 MDA324 11 0 VCE (V) IC (A) 102 Th = 70 °C Tmb = 25 °C Fig.3 Power/temperature derating curves I Continuous operation (f > 1 MHz) II Short-time operation during mismatch; (f > 1 MHz. handbook, halfpage 04 0 8 0 Ptot (W) Th (°C) 160 100 120 MDA325 II I THERMAL RESISTANCE (dissipation = 45 W; Tmb =2 5°C) From junction to mounting base From mounting base to heatsink R th mb-h max. 0,2 K/W

Philips Semiconductors Product specification UHF power transistor BLU30/12 CHARACTERISTICS Tj=2 5°C unless otherwise specified Note 1. Device mounted in SOT-119 envelope without inputmatching. Collector-base breakdown voltage IC = 50 mA; open emitter V (BR)CBO > 36 V Collector-emitter breakdown voltage IC = 100 mA; open base V (BR)CEO > 16,5 V Emitter-base breakdown voltage IE = 10 mA; open collector V (BR)EBO > 4V Collector cut-off current VBE = 0; VCE =1 6V I CES < 22 mA Second breakdown energy L = 25 mH; f = 50 Hz; RBE =1 0Ω ESBR > 8m J D.C. current gain IC = 4 A; VCE =1 0V h FE > 15 typ. 60 Collector capacitance at f = 1 MHz(1) IE = ie =0 ;VCB = 12,5 V C c typ. 85 pF Feed-back capacitance at f = 1 MHz(1) IC = 0; VCE = 12,5 V C re typ. 52 pF Collector-flange capacitance C cf typ. 3 pF Fig.4 Tj =2 5°C; typ. values. handbook, halfpage 048 IC (A) hFE MDA326 VCE = 12.5 V 10 V Fig.5 IE = ie = 0; f = 1 MHz; typ. values. handbook, halfpage 02 0 250 130 170 210 48 1 2 C c (pF) VCB (V) MDA327

Philips Semiconductors Product specification UHF power transistor BLU30/12

APPLICATION INFORMATION

List of components: Mode of operation In narrow-band test circuit; class-B; c.w. Collector-emitter voltage (d.c.) V CE 12,5 V Frequency f 470 MHz Load power P L 30 W Power gain G p > 6,0 dB typ. 7,4 dB Collector efficiency ηC > 55 % typ. 66 % Heatsink temperature T h 25 °C C1 = C2 = C7 = C8 = 2 to 9 pF film dielectric trimmer (cat. no. 2222 809 09002) C3 = C6 = 3,9 pF ceramic capacitor (500 V) C4 = 100 pF feed-through capacitor C5 = 100 nF polyester film capacitor L1 = stripline (24,0 mm× 6,7 mm) L2 = 10 turns closely wound enamelled Cu-wire (0,4 mm); int. diam. 4 mm L3 = 2 turns enamelled Cu-wire (0,6 mm); Ferroxcube tube core, grade 3B5 (cat. no. 4313 020 15170) L4 = 12,6 nH; 2,5 turns enamelled Cu-wire (0,7 mm); int. diam. 4 mm; length 3 mm; leads 2× 5 mm L5 = Ferroxcube wideband h.f. choke, grade 3B (cat. no. 4312 020 36642) L6 = stripline (28,4 mm× 6,7 mm) R1 = R2 = 10Ω carbon resistor L1 and L6 are striplines on a double Cu-clad printed circuit board with P.T.F.E. fibre-glass dielectric (ε r = 2,74); thickness1⁄16 inch. Component lay-out and printed-circuit board for 470 MHz test circuit are shown in Figs 7 and 8. Fig.6 Class-B test circuit at f = 470 MHz. handbook, full pagewidth MDA328 C6L4 +VCC R1 L3 /,/, /,/, /,/, T.U.T. R2 C5 50 Ω 50 Ω

Philips Semiconductors Product specification UHF power transistor BLU30/12 handbook, full pagewidth 104 mm 56.5 mm MDA329 (1) (1) (1) (1) (1)

01565 MJK

double Cu-clad printed-circuit board Cu strap (thick 0.3 mm; wide 5.0 mm) Fig.7 P.c. board for 470 MHz, class-B test circuit. Fig.8 Component lay-out of 470 MHz, class-B test circuit. The circuit and the components are on one side of the P.T.F.E. fibre-glass board; the other side fully metallized serving as groundplane. Earth connections are made by hollow rivets and also by copper straps under the emitter to provide a direct contact between the copper on the component side and the ground plane.

Philips Semiconductors Product specification UHF power transistor BLU30/12 Fig.9 Load power vs. source power. VCE = 12,5 V; f = 470 MHz; class-B operation; Th =2 5°C and 70°C; Rth mb-h= 0,2 K/W; typical values. handbook, halfpage 02 0 48 1 2 PL (W) MDA330 PS (W) 70 °C Th = 25 °C Fig.10 Power and gain and efficiency vs. load power.  Th = 25°C; − − − Th =7 0°C. VCE = 12,5 V; f = 470 MHz; class-B operation; Th =2 5°C and 70°C; Rth mb-h= 0,2 K/W; typical values. handbook, halfpage 05 0 10 20 30 G p (dB) G p MDA331 PL (W) 100 125 150 ηC (%) ηC RUGGEDNESS The device is capable of withstanding a full load mismatch (VSWR = 50; all phases) up to 38 W under the following conditions: V CE = 15,5 V; f = 470 MHz; Th =2 5°C; Rth mb-h= 0,2 K/W.

Philips Semiconductors Product specification UHF power transistor BLU30/12 Fig.11 Input impedance (series components). VCE = 12,5 V; PL = 30 W; f = 400−512 MHz; Th =2 5°C; class-B operation; Rth mb-h= 0,2 K/W; typical values. handbook, halfpage 400 430 xi ri f (MHz) Zi (Ω ) 460 520 490 MDA332 Fig.12 Load impedance (series components). handbook, halfpage 400 430 XL R L f (MHz) ZL (Ω ) 460 520 490 MDA333 VCE = 12,5 V; PL = 30 W; f = 400−512 MHz; Th =2 5°C; class-B operation; Rth mb-h= 0,2 K/W; typical values. Fig.13 Power gain versus frequency. handbook, halfpage 400 430 460 G p (dB) f (MHz) 520 490 MDA334 VCE = 12,5 V; PL = 30 W; f = 400−512 MHz; Th =2 5°C; class-B operation; Rth mb-h= 0,2 K/W; typical values.

Philips Semiconductors Product specification UHF power transistor BLU30/12 PACKAGE OUTLINE REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT119A 97-06-28 0 5 10 mm scale Flanged ceramic package; 2 mounting holes; 6 leads SOT119A U 2H A F A b Mw 3b1 p w 1 ABM D 1 DU 3 Q c q U 1 C B e M Cw 2H 1 UNIT A mm Db 5.59 5.33 0.18 0.07 12.86 12.59 6.48 22.10 21.08 6.48 6.07 12.76 12.06 7.39 6.32 c eU 2 0.5118.42 qw 1 0.261.02 w 3w 2U 3H 1 18.55 18.28 U 1 25.23 23.95 4.07 3.81 b2b1 5.34 5.08 p 3.31 2.97 Q 4.58 3.98 FH 12.83 12.57 D 1 2.54 2.28 inches 0.220 0.210 0.007 0.003 0.505 0.496 0.255 0.870 0.830 0.255 0.239 0.502 0.475 0.291 0.720 0.993 0.943 0.160 0.150 0.210 0.200 0.130 0.117 0.180 0.157 0.505 0.495 0.100 0.090 DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

Philips Semiconductors Product specification UHF power transistor BLU30/12 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Where application information is given, it is advisory and does not form part of the specification.