BLU20 PHILIPS

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Product specification August 1986 DISCRETE SEMICONDUCTORS BLU20/12 UHF power transistor

Philips Semiconductors Product specification UHF power transistor BLU20/12

DESCRIPTION

N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 470 MHz communications band.

FEATURES

  • multi-base structure and emitter-ballasting resistors for an optimum temperature profile
  • gold metallization ensures excellent reliability.
  • internal matching to achieve an optimum wideband capability and high power gain. The transistor has a 6-lead flange envelope with a ceramic cap (SOT-119). All leads are isolated from the flange. QUICK REFERENCE DATA Envelope SOT-119 Mode of operation class-B; c.w. Collector-emitter voltage (d.c.) V CE 12,5 V Frequency f 470 MHz Load power PL 20 W Power gain G P > 6,5 dB Collector efficiency ηc > 55 % Heatsink temperature Th 25 °C PIN CONFIGURATION Fig.1 Simplified outline, SOT119A. handbook, halfpage MSB006 PINNING PIN DESCRIPTION 1 emitter 2 emitter 3 base 4 collector 5 emitter 6 emitter PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.

Philips Semiconductors Product specification UHF power transistor BLU20/12 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134). Collector-base voltage (open emitter) peak value V CBOM max. 36 V Collector-emitter voltage (open base) V CEO max. 16,5 V Emitter-base voltage (open collector) V EBO max. 4 V Collector current d.c. or average I C max. 4 A (peak value); f> 1 MHz I CM max. 12 A Total power dissipation at Tmb = 25°CP tot(d.c.) max. 38 W f> 1 MHz; Tmb = 25°CP tot(r.f.) max. 44 W Storage temperature T stg −65 to+ 150 °C Operating junction temperature T j max. 200 °C Fig.2 D.C. SOAR. R th mb-h= 0,2 K/W handbook, halfpage 10−1 MDA313 11 0 VCE (V) IC (A) 102 Th = 70 °C Tmb = 25 °C Fig.3 Power/temperature derating curves I Continuous operation II Continuous operation (f > 1 MHz) III Short-time operation during mismatch; (f > 1 MHz) handbook, halfpage 04 0 I II III Th (°C) Ptot (W) 160 120 MDA314 THERMAL RESISTANCE (dissipation = 37 W; Tmb =2 5°C, i.e. Th =1 8°C) From junction to mounting base (d.c. dissipation) R th j-mb(d.c.)max 4,6 K/W (r.f. dissipation) R th j-mb(r.f.)max 4,1 K/W From mounting base to heatsink R th mb-h max 0,2 K/W

Philips Semiconductors Product specification UHF power transistor BLU20/12 CHARACTERISTICS Tj=2 5°C unless otherwise specified Collector-base breakdown voltage IC = 25 mA; open emitter V (BR)CBO > 36 V Collector-emitter breakdown voltage IC = 50 mA; open base V (BR)CEO > 16,5 V Emitter-base breakdown voltage IE = 5 mA; open collector V (BR)EBO > 4V Collector cut-off current VBE = 0; VCE =2 0V I CES < 12,5 mA Second breakdown energy L = 25 mH; f = 50 Hz; RBE =1 0Ω ESBR > 5,3 mJ D.C. current gain IC = 2,7 A; VCE =1 0V h FE > 15 typ. 60 Collector capacitance at f = 1 MHz IE = ie =0 ;VCB = 12,5 V C C typ. 53 pF Feed-back capacitance at f = 1 MHz IC = 0; VCE = 12,5 V C re typ. 33 pF Collector-flange capacitance C cf typ. 3 pF Fig.4 Tj =2 5°C; typ. values. handbook, halfpage 02 1 0 46 8 MDA315 hFE IC (A) VCE = 12.5 V 10 V Fig.5 IE =Ie = 0; f = 1 MHz; typ. values. handbook, halfpage 048 VCB (V) C c (pF) 160 120 MDA316

Philips Semiconductors Product specification UHF power transistor BLU20/12

APPLICATION INFORMATION

Mode of operation in narrow band test circuit; class-B; c.w. Collector-emitter voltage (d.c.) V CE 12,5 V Frequency f 470 MHz Load power P L 20 W Power gain G p > 6,5 dB typ. 7,8 dB Collector efficiency ηc > 55 % typ. 64 % Heatsink temperature T h 25 °C Fig.6 Class-B test circuit at f = 470 MHz. handbook, full pagewidth MDA317 /,/,/,/,/,/,/, /,/,/,/,/,/,/, /,/,/,/, /,/,/,/, /,/,/,/, /,/,/,/, /,/,/, /,/,/, T.U.T. L4 L6 C10 50 Ω50 Ω +VCC

Philips Semiconductors Product specification UHF power transistor BLU20/12 List of components: Note 1. American Technical Ceramics capacitor or capacitor of same quality. C1 = C9 = 1,8 to 10 pF film dielectric trimmer (cat. no. 2222 809 05002) C2 = 2 to 9 pF film dielectric trimmer (cat.no. 2222 809 09002) C3 = C4 = 8,2 pF multilayer ceramic chip capacitor (100A type) (1) C5 = 100 nF polyester film capacitor C6 = 120 pF multilayer ceramic chip capacitor C7 = 8,2 pF multilayer ceramic chip capacitor (100B type) (1) C8 = 2 to 18 pF film dielectric trimmer (cat.no. 2222 809 09003) C10 = 2,2µF electrolytic capacitor L1 = 50Ω stripline (43,5 mm× 4,0 mm) L2 = 100 nH; 5 turns closely wound enamelled Cu-wire (0,5 mm); int. diam. 4 mm; leads 2× 5 mm L3 = 37,6Ω stripline (8,0 mm× 6,0 mm) L4 = 37,6Ω stripline (9,0 mm× 6,0 mm) L5 = 74,4Ω stripline (22,5 mm× 2,0 mm) L6 = 37,6Ω stripline (18,0 mm× 6,0 mm) L7 = L8 = Ferroxcube wideband h.f. choke, grade 3B (cat.no. 4312 020 36642) R1 = 1Ω± 5%; 0,4 W metal film resistor (MR25 type) R2 = 10Ω± 5%; 0,4 W metal film resistor (MR25 type) L1, L3, L4, L5 and L6 are striplines on a double Cu-clad printed circuit board with P.T.F.E. fibre-glass dielectric r = 2,74); thickness 1/16 inch.

Philips Semiconductors Product specification UHF power transistor BLU20/12 handbook, full pagewidth MDA318 116 rivets L8 R1 E B E E C5 L7 C10 VCCR2 CL 4 L 6 C9C7 E rivets Fig.8 Component lay-out of 470 MHz, class-B test circuit. Fig.7 P.C. board for 470 MHz, class-B test circuit. The circuit and the components are on one side of the P.T.F.E. fibre-glass board; the other side is unetched copper serving as groundplane. Earth connections are made by hollow rivets and also by copper straps under the emitters and around the board to provide a direct contact between the copper on the component side and the ground plane. Dimensions in mm.

Philips Semiconductors Product specification UHF power transistor BLU20/12 Fig.9 Load power vs. source power. VCE = 12,5 V; f = 470 MHz; class-B operation; Th =2 5°C and 70 °C; Rth mb-h= 0,2 K/W; typical values. handbook, halfpage 02 1 0 46 8 MDA319 PL (W) PS (W) Th = 25 °C 70 °C Fig.10 Power gain and efficiency vs. load power. handbook, halfpage 11 0 PL (W) 20 40 100 0 0 G p (dB) ηC (%) ηC MDA320 G p Th = 25 °C 70 °C VCE = 12,5 V; f = 470 MHz; class-B operation; Th =2 5°C and 70°C; Rth mb-h= 0,2 K/W; typical values. RUGGEDNESS The device is capable of withstanding a full load mismatch (VSWR = 50; all phases) up to 25 W under the following conditions: V CE = 15,5 V; f = 470 MHz; Th =2 5°C; Rth mb-h= 0,2 K/W.

Philips Semiconductors Product specification UHF power transistor BLU20/12 Fig.11 Input impedance (series components). VCE = 12,5 V; PL = 20 W; f = 400− 512 MHz; Th =2 5°C; class-B operation; Rth mb-h= 0,2 K/W; typical values. handbook, halfpage 400 430 460 f (MHz) Zi (Ω ) 520 490 MDA321 xi ri Fig.12 Load impedance (series components). VCE = 12,5 V; PL = 20 W; f = 400− 512 MHz; Th =2 5°C; class-B operation; Rth mb-h= 0,2 K/W; typical values. handbook, halfpage 400 430 R L XL 460 f (MHz) ZL (Ω ) 520 490 MDA322 Fig.13 Power gain versus frequency. VCE = 12,5 V; PL = 20 W; f = 400− 512 MHz; Th =2 5°C; class-B operation; Rth mb-h= 0,2 K/W; typical values. handbook, halfpage 400 430 460 G p (dB) f (MHz) 520 490 MDA323

Philips Semiconductors Product specification UHF power transistor BLU20/12 PACKAGE OUTLINE REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT119A 97-06-28 0 5 10 mm scale Flanged ceramic package; 2 mounting holes; 6 leads SOT119A U 2H A F A b Mw 3b1 p w 1 ABM D 1 DU 3 Q c q U 1 C B e M Cw 2H 1 UNIT A mm Db 5.59 5.33 0.18 0.07 12.86 12.59 6.48 22.10 21.08 6.48 6.07 12.76 12.06 7.39 6.32 c eU 2 0.5118.42 qw 1 0.261.02 w 3w 2U 3H 1 18.55 18.28 U 1 25.23 23.95 4.07 3.81 b2b1 5.34 5.08 p 3.31 2.97 Q 4.58 3.98 FH 12.83 12.57 D 1 2.54 2.28 inches 0.220 0.210 0.007 0.003 0.505 0.496 0.255 0.870 0.830 0.255 0.239 0.502 0.475 0.291 0.720 0.993 0.943 0.160 0.150 0.210 0.200 0.130 0.117 0.180 0.157 0.505 0.495 0.100 0.090 DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

Philips Semiconductors Product specification UHF power transistor BLU20/12 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Where application information is given, it is advisory and does not form part of the specification.