BLT53 PHILIPS

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Technical content

Product specification May 1991 DISCRETE SEMICONDUCTORS BLT53 UHF power transistor

Philips Semiconductors Product specification UHF power transistor BLT53

FEATURES

  • Emitter-ballasting resistors for an optimum temperature profile
  • Gold metallization ensures excellent reliability
  • Withstands full load mismatch.

DESCRIPTION

NPN silicon planar epitaxial transistor encapsulated in a 4-lead SOT122D studless envelope with a ceramic cap. It is designed for common emitter, class-B operation in portable radio transmitters in the 470 MHz communications band. All leads are isolated from the mounting flange. PINNING - SOT122D PIN DESCRIPTION 1 collector 2 emitter 3 base 4 emitter QUICK REFERENCE DATA RF performance at Tmb = 25°C in a common emitter test circuit. PIN CONFIGURATION MODE OF OPERATION f (MHz) VCE (V) PL (W) G p (dB) ηc (%) c.w. class-B 470 7.5 8 > 6 > 60 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. handbook, halfpage e c b MBB012 Fig.1 Simplified outline and symbol. halfpage MSB055

Philips Semiconductors Product specification UHF power transistor BLT53 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 10 V VEBO emitter-base voltage open collector − 3V IC , IC(AV) collector current DC or average value − 2.5 A ICM collector current peak value f > 1 MHz − 7.5 A Ptot total power dissipation RF operation; Tmb = 25°C − 35.5 W Tstg storage temperature range −65 150 °C Tj junction operating temperature − 200 °C Fig.2 DC SOAR. handbook, halfpage 102 MCD192

10 VCE (V)

(A) 10−1 Tmb = 25 oC 70 oC Fig.3 Power derating curve. (1) Continuous DC operation. (2) Continuous RF operation (f> 1 MHz). (3) Short time operation during mismatch (f> 1 MHz). handbook, halfpage 04 0 8 0 Ptot (W) Tmb (oC) 160 MCD193 120 (1) (3) (2) THERMAL RESISTANCE SYMBOL PARAMETER CONDITIONS MAX. UNIT R th j-mb(RF) from junction to mounting base P tot = 35.5 W; Tmb = 25°C

4.9 K/W

Philips Semiconductors Product specification UHF power transistor BLT53 CHARACTERISTICS Tj = 25°C. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)CBO collector-base breakdown voltage open emitter; IC = 20 mA 20 −− V V(BR)CEO collector-emitter breakdown voltage open base; IC = 40 mA 10 −− V V(BR)EBO emitter-base breakdown voltage open collector; IE = 4 mA 3 −− V ICES collector-emitter leakage current V BE = 0; VCE = 10 V −− 1m A hFE DC current gain V CE = 5 V; IC = 1.2 A 25 −− fT transition frequency V CE = 7.5 V; IE = 1.6 A − 3.9 − GHz C c collector capacitance V CB = 7.5 V; IE = Ie = 0; f = 1 MHz − 24 − pF C re feedback capacitance V CE = 7.5 V; IC = 0; f = 1 MHz − 17 − pF C c-mb collector-mounting base capacitance f = 1 MHz − 1.2 − pF Fig.4 DC current gain as a function of collector current, typical values. VCE = 5 V. handbook, halfpage 024 hFE IC (A) MCD194 Fig.5 Collector capacitance as a function of collector-base voltage, typical values. IE = ie = 0; f = 1 MHz. handbook, halfpage 048 C c (pF) VCB (V) 12 MCD195

Philips Semiconductors Product specification UHF power transistor BLT53 Fig.6 Transition frequency as a function of emitter current, typical values. VCB = 7.5 V. handbook, halfpage 024 fT (GHz) IE (A) 6 MCD196

Philips Semiconductors Product specification UHF power transistor BLT53

APPLICATION INFORMATION

RF performance at Tmb = 25°C in a common emitter test circuit. MODE OF OPERATION f (MHz) VCE (V) PL (W) G p (dB) ηc (%) c.w. class-B 470 7.5 8 > 6 typ. 6.8 > 60 typ. 65 Fig.7 Gain and efficiency as functions of load power, typical values. Class-B operation; VCE = 7.5 V; f = 470 MHz. handbook, halfpage 048 G p (dB) G p PL (W) 12 MCD197 η (%) η Fig.8 Load power as a function of drive power, typical values. Class-B operation; VCE = 7.5 V; f = 470 MHz. handbook, halfpage 0 12 PL (W) MCD198 PD (W) Ruggedness in class-B operation The BLT53 is capable of withstanding a full load mismatch corresponding to VSWR = 50:1 through all phases at rated output power, up to a supply voltage of 9 V, and f = 470 MHz.

Philips Semiconductors Product specification UHF power transistor BLT53 List of components (see test circuit) Note 1. The striplines are mounted on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (εr = 2.74); thickness1⁄16 inch. COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C2, C7, C8 film dielectric trimmer 2 to 9 pF 2222 809 09002 C3, C4 multilayer ceramic chip capacitor 15 pF C5 feed-through capacitor 100 pF C6 polyester capacitor 33 nF L1 stripline (note 1) 44 Ω 41.1 mm × 5 mm L2 13 turns closely wound enamelled 0.5 mm copper wire 320 nH int. dia. 4 mm L3 2 turns enamelled 1 mm copper wire int. dia. 4 mm; pitch 1.5 mm; leads 2× 5 mm L4 stripline (note 1) 44 Ω 52.7 mm × 5 mm L5 grade 3B1 Ferroxcube wideband HF choke 4312 020 36640 R1 0.25 W carbon resistor 1 Ω ,5 % R2 0.25 W carbon resistor 10 Ω ,5 % Fig.9 Class-B test circuit at f = 470 MHz. handbook, full pagewidth MBH107 T.U.T. L4 C7 C8L3 C4C3 C2 L1 /,/,/,/, ZL = 50 Ω output ZS = 50 Ω input +VCC

Philips Semiconductors Product specification UHF power transistor BLT53 Fig.10 Component layout for 470 MHz class-B test circuit. The circuit and components are situated on one side of a copper-clad PTFE fibre-glass board; the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by means of hollow rivets. Dimensions in mm. handbook, full pagewidth MBH108 input 50 Ω output 50 Ω rivet (4x) 52.741.1 146 R1 C3 C4 L3 VCC

Philips Semiconductors Product specification UHF power transistor BLT53 Fig.11 Input impedance (series components) as a function of frequency, typical values. Class-B operation; VCE = 7.5 V; PL = 8 W. handbook, halfpage 400 440 480 Zi (Ω ) ri xi 520 MCD199 f (MHz) Fig.12 Load impedance (series components) as a function of frequency, typical values. Class-B operation; VCE = 7.5 V; PL = 8 W. handbook, halfpage 400 440 ZL (Ω ) R L XL 480 520 MCD200 f (MHz) Fig.13 Definition of transistor impedance. handbook, halfpage MBA451 Zi ZL Fig.14 Power gain as a function of frequency, typical values. Class-B operation; VCE = 7.5 V; PL = 8 W. handbook, halfpage 400 440 G p (dB) 480 520 MCD201 f (MHz)

Philips Semiconductors Product specification UHF power transistor BLT53 PACKAGE OUTLINE UNIT A D 2 REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ mm α 90° SOT122D 97-04-18 H b H L Db 5.85 5.58 4.17 3.27 0.18 0.14 7.50 7.23 7.24 6.98 cQ 1.58 1.27 H 27.56 25.78 9.91 9.14 L 0 5 10 mm scale Q A D 2 D c Studless ceramic package; 4 leads SOT122D α DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

Philips Semiconductors Product specification UHF power transistor BLT53 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Where application information is given, it is advisory and does not form part of the specification.