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BLS6G2933S-130 NXP

Document overview

Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
PDF pages: 11

Technical content

1.1 General description

1.2 Features

Table 1. Typical performance during transport and handling.

1.3 Applications

Table 2. Pinning Table 3. Ordering information Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Table 5. Thermal characteristics

BLS6G2933S-130_1 © NXP B.V. 2008. All rights reserved. Table 6. Characteristics Tj=2 5°C unless otherwise speciﬁed. Table 7. Application information Tcase =2 5°C; unless otherwise speciﬁed, in a class-AB production circuit.

7.1 Ruggedness in class-AB operation

Table 8. Typical impedance

7.2 Graphs

VDS =3 2V ; IDq = 100 mA; tp = 300µs;δ = 10 %. (1) f = 2.9 GHz (2) f = 3.1 GHz (3) f = 3.3 GHz V DS = 32 V; IDq = 100 mA; tp = 100µs;δ = 20 %. (1) f = 2.9 GHz (2) f = 3.1 GHz (3) f = 3.3 GHz Fig 2. Power gain as a function of load power; typical values Fig 3. Power gain as a function of load power; typical values VDS =3 2V ; IDq = 100 mA; tp = 300µs;δ = 10 %. (1) f = 2.9 GHz (2) f = 3.1 GHz (3) f = 3.3 GHz V DS = 32 V; IDq = 100 mA; tp = 100µs;δ = 20 %. (1) f = 2.9 GHz (2) f = 3.1 GHz (3) f = 3.3 GHz Fig 4. Drain efﬁciency as a function of load power; typical values Fig 5. Drain efﬁciency as a function of load power; typical values PL (W) 0 180 12060 001aaj266 G p (dB) (2) (3) (1) PL (W) 0 180 12060 001aaj267 G p (dB) (2) (3) (1) PL (W) 0 180 12060 001aaj268 h D (%) (2) (3) (1) PL (W) 0 180 12060 001aaj269 h D (%) (2) (3) (1)

BLS6G2933S-130_1 © NXP B.V. 2008. All rights reserved. Objective data sheet Rev. 01 — 11 December 2008 6 of 11 NXP Semiconductors BLS6G2933S-130 LDMOS S-band radar power transistor VDS =3 2V ; IDq = 100 mA; tp = 300µs;δ = 10 %. (1) f = 2.9 GHz (2) f = 3.1 GHz (3) f = 3.3 GHz V DS = 32 V; IDq = 100 mA; tp = 100µs;δ = 20 %. (1) f = 2.9 GHz (2) f = 3.1 GHz (3) f = 3.3 GHz Fig 6. Load power as a function of input power; typical values Fig 7. Load power as a function of input power; typical values PL = 130 W; VDS =3 2V ; IDq = 100 mA; tp = 300µs; δ =1 0% . PL = 130 W; VDS =3 2V ; IDq = 100 mA; tp = 100µs; δ =2 0% . Fig 8. Power gain and drain efﬁciency as function of frequency; typical values Fig 9. Power gain and drain efﬁciency as function of frequency; typical values Pi (W) 01 8 126 001aaj270 120 180 P L (W) (2) (3) (1) Pi (W) 01 8 126 001aaj271 120 180 P L (W) (2) (3) (1) f (MHz) 2850 3350 32503050 31502950 001aaj272 G p (dB) hD (%) G p hD f (MHz) 2850 3350 32503050 31502950 001aaj273 G p (dB) hD (%) G p hD

BLS6G2933S-130_1 © NXP B.V. 2008. All rights reserved. Striplines are on a double copper-clad Duroid 6006 Printed-Circuit Board (PCB) withεr = 6.15 and thickness = 0.64 mm. See Table9 for list of components. Table 9. List of components

BLS6G2933S-130_1 © NXP B.V. 2008. All rights reserved. Objective data sheet Rev. 01 — 11 December 2008 8 of 11 NXP Semiconductors BLS6G2933S-130 LDMOS S-band radar power transistor 9. Package outline Fig 11. Package outline SOT922-1 REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC JEITA SOT922-1 SOT922-1 05-11-14 05-11-22 DIMENSIONS (mm are the original dimensions) Ceramic earless flanged cavity package; 2 leads 0 5 10 mm scale UNIT A mm Db 12.42 12.17 0.15 0.10 17.58 17.22 9.27 9.02 15.62 14.34 9.53 9.27 4.22 3.53 c U 2 0.25 w 2F 1.32 0.81 U 1 17.75 17.50 L 3.05 2.03 Q 1.70 1.45 EE 1 9.53 9.27 inches 0.489 0.479 0.006 0.004 0.692 0.678 D 1 17.50 17.25 0.689 0.679 0.365 0.355 0.615 0.525 0.375 0.365 0.166 0.139 0.0100.052 0.032 0.699 0.689 0.12 0.08 0.067 0.057 0.375 0.365 H D A D 1 D F Dw2 M M U 2 U 1 b H L c Q EE1

BLS6G2933S-130_1 © NXP B.V. 2008. All rights reserved. Objective data sheet Rev. 01 — 11 December 2008 10 of 11 NXP Semiconductors BLS6G2933S-130 LDMOS S-band radar power transistor 12. Legal information

12.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Deﬁnitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.

12.2 Deﬁnitions

Draft —The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modiﬁcations or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet —A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales ofﬁce. In case of any inconsistency or conﬂict with the short data sheet, the full data sheet shall prevail.

12.3 Disclaimers

General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes —NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation speciﬁcations and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use —NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications —Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the speciﬁed use without further testing or modiﬁcation. Limiting values —Stress above one or more limiting values (as deﬁned in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale —NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/proﬁle/terms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conﬂict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license —Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.

12.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit:http://www.nxp.com For sales ofﬁce addresses, please send an email to:salesaddresses@nxp.com Document status[1][2] Product status[3] Deﬁnition Objective [short] data sheet Development This document contains data from the objective speciﬁcation for product development. Preliminary [short] data sheet Qualiﬁcation This document contains data from the preliminary speciﬁcation. Product [short] data sheet Production This document contains the product speciﬁcation.

NXP Semiconductors BLS6G2933S-130 LDMOS S-band radar power transistor © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 11 December 2008 Document identifier: BLS6G2933S-130_1 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. 14. Contents

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NXP Semiconductors BLS6G2933S-130 overview.

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Summary

LDMOS S-band radar power transistor Rev. 03-3 March 2010

Description

LDMOS S-band radar power transistor Rev. 03-3 March 2010

Source title BLS6G2933S-130_10 Datasheet(PDF) - NXP Semiconductors

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