BLD137DL ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 iscSiliconNPNPowerTransistors BLD137DL
DESCRIPTION
- WithTO-220 packaging
- Reliableperformance athigherpowers
- Accurate reproduction ofInputsignal
- Greaterdynamicrange
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
APPLICATIONS
- Switching regulators
- Highfrequencyinverters
- Generalpurpose poweramplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage 400 V VCEO Collector-EmitterVoltage 200 V VEBO Emitter-BaseVoltage 9 V IC CollectorCurrent-Continuous 12 A PT TotalPower Dissipation 80 W TJ JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -65~150 ℃ THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase 0.63 ℃/W
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 iscSiliconNPNPowerTransistors BLD137DL ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-EmitterSustainingVoltage IC=10mA;IB=0 200 V VCBO Collector-BaseVoltage IC=1mA;IE=0 400 V VEBO Emitter-BaseVoltage IE=1mA;IC=0 9 V VCE(sat)1 Collector-EmitterSaturationVoltage IC=2A;IB=0.4A 0.5 V VCE(sat)2 Collector-EmitterSaturationVoltage IC=10A;IB=2A 1.5 V VBE(sat) Base-EmitterSaturationVoltage IC=10A;VCE=2V 1.5 V ICBO CollectorCutoffCurrent VCB=400V 100 μA ICEO CollectorCutoffCurrent VCE=200V;IB=0 250 μA hFE-1 DCCurrentGain IC=10mA;VCE=5V 7 hFE-2 DCCurrentGain IC=2A;VCE=5V 10 40 hFE-3 DCCurrentGain IC=12A;VCE=5V 5