BFU550A NPN wideband silicon RF transistor
Document overview
- Manufacturer or author: NXP Semiconductors
- PDF pages: 22
Technical content
1.1 General description
power applications up to 2 GHz.
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Table 1. Quick reference data
[1] T sp is the temperature at the solder point of the collector lead. [2] If K > 1 then G p(max) is the maximum power gain. If K 1 then Gp(max) =M S G . Table 1. Quick reference data …continued Table 2. Discrete pinning Table 3. Ordering information Table 4. Marking
- Recommended operating conditions
[1] T sp is the temperature at the solder point of the collector lead. Table 5. Available design support Download from the BFU550A product information page on http://www.nxp.com. Device models for Agilent EEsof EDA ADS yes Based on Mextram device model. Customer evaluation kit yes See Section 3 and Section 10. Application notes yes See Section 10.1 and Section 10.2. Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Table 7. Characteristics
[1] T sp is the temperature at the solder point of the collector lead. ambient. Rth(sp-a) is determined by the heat transfer properties in the application. Table 8. Thermal characteristics Table 9. Characteristics
Table 9. Characteristics …continued
[1] If K > 1 then G p(max) is the maximum power gain. If K 1 then Gp(max) =M S G .
Product data sheet Rev. 1 — 13 January 2014 7 of 22 NXP Semiconductors BFU550A NPN wideband silicon RF transistor
9.1 Graphs
Tamb =2 5 C. (1) I B =2 5 A (2) I B =7 5 A (3) I B = 125 A (4) I B = 175 A (5) I B = 225 A (6) I B = 275 A (7) I B = 325 A Fig 2. Collector current as a function of collector-emitter voltage; typical values Tamb =2 5 C. (1) V CE =3 . 0V (2) V CE =8 . 0V VCE =8V . (1) T amb = 40 C (2) T amb = +25 C (3) T amb = +125 C Fig 3. DC current gain as function of collector current; typical values Fig 4. DC current gain as function of collector current; typical values DDD 9&( ,&,& DDD K)()(K)( DDD K)()(K)(
Product data sheet Rev. 1 — 13 January 2014 8 of 22 NXP Semiconductors BFU550A NPN wideband silicon RF transistor Tamb =2 5 C. (1) V CE =3 . 0V (2) V CE =8 . 0V Tamb =2 5 C. (1) V CE =3 . 0V (2) V CE =8 . 0V Fig 5. Collector current as a function of base-emitter voltage; typical values Fig 6. Base current as a function of base-emitter voltage; typical values VCE =3V . (1) T amb = 40 C (2) T amb = +25 C (3) T amb = +125 C IC = 0 mA; f = 1 MHz; Tamb =2 5 C. Fig 7. Reverse base current as a function of emitter-base voltage; typical values Fig 8. Collector capacitance as a function of collector-base voltage; typical values DDD 9%( ,&,& DDD 9%( ,%,% DDD 9(% ,%5%5,%5 DDD 9&% &&&&
Product data sheet Rev. 1 — 13 January 2014 9 of 22 NXP Semiconductors BFU550A NPN wideband silicon RF transistor Tamb =2 5 C. (1) V CE =3 . 3V (2) V CE =5 . 0V (3) V CE =8 . 0V (4) V CE = 12.0 V Fig 9. Transition frequency as a functi on of collector current; typical values IC =1 5m A ; VCE =8V ; Tamb =2 5 C. IC =2 5m A ; VCE =8V ; Tamb =2 5 C. Fig 10. Gain as a function of frequency; typical values Fig 11. Gain as a function of frequency; typical values DDD I7I7 *+] *+] *+] DDD I 0+] 06*06*06* PD[ S PD[ PD[ 06*06*06* DDD I 0+] 06*06*06* PD[ S PD[ PD[ 06*06*06*
Product data sheet Rev. 1 — 13 January 2014 10 of 22 NXP Semiconductors BFU550A NPN wideband silicon RF transistor VCE =8V ; Tamb =2 5 C. (1) f = 300 MHz (2) f = 433 MHz (3) f = 800 MHz (4) f = 900 MHz (5) f = 1800 MHz V CE =8V ; Tamb =2 5 C. If K >1 then Gp(max) = maximum power gain. If K < 1 then Gp(max) = MSG. (1) f = 300 MHz (2) f = 433 MHz (3) f = 800 MHz (4) f = 900 MHz (5) f = 1800 MHz Fig 12. Insertion power gain as a function of collector current; typical values Fig 13. Maximum power gain as a function of collector current; typical values DDD DDD PD[ S PD[ PD[
Product data sheet Rev. 1 — 13 January 2014 11 of 22 NXP Semiconductors BFU550A NPN wideband silicon RF transistor IC =2 5m A ; Tamb =2 5 C. (1) f = 300 MHz (2) f = 433 MHz (3) f = 800 MHz (4) f = 900 MHz (5) f = 1800 MHz I C =2 5m A ; Tamb =2 5 C. If K >1 then Gp(max) = maximum power gain. If K < 1 then Gp(max) = MSG. (1) f = 300 MHz (2) f = 433 MHz (3) f = 800 MHz (4) f = 900 MHz (5) f = 1800 MHz Fig 14. Insertion power gain as a function of collector-emitter voltage; typical values Fig 15. Maximum power gain as a function of collector-emitter voltage; typical values DDD 9&( DDD 9&( PD[ S PD[ PD[
Product data sheet Rev. 1 — 13 January 2014 12 of 22 NXP Semiconductors BFU550A NPN wideband silicon RF transistor VCE = 8 V; 40 MHz f 3 GHz. (1) I C = 15 mA (2) I C = 25 mA Fig 16. Input reflection coefficient (s 11); typical values VCE = 8 V; 40 MHz f 3 GHz. (1) I C = 15 mA (2) I C = 25 mA Fig 17. Output reflection coefficient (s 22); typical values DDD DDD
Product data sheet Rev. 1 — 13 January 2014 13 of 22 NXP Semiconductors BFU550A NPN wideband silicon RF transistor VCE =8V ; Tamb =2 5 C. (1) f 1 = 433 MHz; f2 = 434 MHz (2) f 1 = 900 MHz; f2 = 901 MHz (3) f 1 = 1800 MHz; f2 = 1801 MHz VCE =8V ; Tamb =2 5 C. (1) f = 433 MHz (2) f = 900 MHz (3) f = 1800 MHz Fig 18. Output third-order intercept point as a function of collector current; typical values Fig 19. Output power at 1 dB gain compression as a function of collector current; typical values IC = 25 mA; Tamb =2 5 C. (1) f 1 = 433 MHz; f2 = 434 MHz (2) f 1 = 900 MHz; f2 = 901 MHz (3) f 1 = 1800 MHz; f2 = 1801 MHz IC =2 5 m A ; Tamb =2 5 C. (1) f = 433 MHz (2) f = 900 MHz (3) f = 1800 MHz Fig 20. Output third-order intercept point as a function of collector-emitter voltage; typical values Fig 21. Output power at 1 dB gain compression as a function of collector-emitter voltage; typical values DDD ,3,3R,3R G%P G%P G%P DDD G%P G%P G%P DDD 9&( ,3,3R,3R G%P G%P G%P DDD 9&( G%P G%P G%P
Product data sheet Rev. 1 — 13 January 2014 14 of 22 NXP Semiconductors BFU550A NPN wideband silicon RF transistor VCE =8V ; Tamb =2 5 C; S = opt. (1) f = 433 MHz (2) f = 900 MHz (3) f = 1800 MHz VCE =8V ; Tamb =2 5 C; S = opt. (1) I C =1m A (2) I C =2m A (3) I C =3m A (4) I C =5m A (5) I C =1 0m A (6) I C =1 5m A (7) I C =2 5m A (8) I C =3 5m A Fig 22. Minimum noise figure as a function of collector current; typical values Fig 23. Minimum noise figu re as a function of frequency; typical values DDD 1)1)PLQPLQ1)PLQ DDD I 0+] 1)1)PLQPLQ1)PLQ
Product data sheet Rev. 1 — 13 January 2014 15 of 22 NXP Semiconductors BFU550A NPN wideband silicon RF transistor 10. Application information More information about the following application example can be found in the application notes. See Section 5 “Design support”. The following application example can be implemented using the evaluation kit. See Section 3 “Ordering information” for the order type number. The following application example can be simulated using the simulation package. See Section 5 “Design support”. VCE = 8 V; 400 MHz f 2 GHz. (1) I C =1m A (2) I C =2m A (3) I C =3m A (4) I C =5m A (5) I C =1 0m A (6) I C =1 5m A (7) I C =2 5m A (8) I C =3 5m A Fig 24. Optimum reflec tion coefficient (opt); typical values DDD
10.1 Application example: 433 ISM band LNA
433 ISM band LNA, optimized for low noise. Table 10. Application performance data at 433 MHz
10.2 Application example: 866 ISM band LNA
866 ISM band LNA, optimized for low noise. Table 11. Application performance data at 866 MHz
Product data sheet Rev. 1 — 13 January 2014 18 of 22 NXP Semiconductors BFU550A NPN wideband silicon RF transistor 11. Package outline Fig 27. Package outline SOT23 81,7 $ PD[ ES F'( H +( /S 4Z Y 5()(5(1&(6287/,1( 9(56,21 (8523($1 ,(& -('(& -(,7$ PP H ',0(16,216 PPDUHWKHRULJLQDOGLPHQVLRQV 627 72$% ES H H GHWDLO; Z 0 Y 0 $ P P VFDOH F 3ODVWLFVXUIDFHPRXQWHGSDFNDJH OHDGV 627
electrostatic sensitive devices. Table 12. Abbreviations Table 13. Revision history
Product data sheet Rev. 1 — 13 January 2014 20 of 22 NXP Semiconductors BFU550A NPN wideband silicon RF transistor 15. Legal information
15.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
15.2 Definitions
Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.
15.3 Disclaimers
Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
Product data sheet Rev. 1 — 13 January 2014 21 of 22 NXP Semiconductors BFU550A NPN wideband silicon RF transistor Suitability for use in automotive applications — This NXP Semiconductors product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions.
15.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 16. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors BFU550A NPN wideband silicon RF transistor © NXP B.V. 2014. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 13 January 2014 Document identifier: BFU550A Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. 17. Contents