BFT25

BFT25 PHILIPS

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Technical content

Product specification File under Discrete Semiconductors, SC14 November 1992 DISCRETE SEMICONDUCTORS BFT25 NPN 2 GHz wideband transistor

Philips Semiconductors Product specification NPN 2 GHz wideband transistor BFT25

DESCRIPTION

NPN transistor in a plastic SOT23 envelope. It is primarily intended for use in RF low power amplifiers, such as in pocket phones, paging systems, etc. The transistor features low current consumption (100µA to 1 mA); due to its high transition frequency, it also has excellent wideband properties and low noise up to high frequencies. PINNING PIN DESCRIPTION Code: V1p 1 base 2 emitter 3 collector Fig.1 SOT23. fpage MSB003Top view QUICK REFERENCE DATA LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). Note 1. Ts is the temperature at the soldering point of the collector tab. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCBO collector-base voltage open emitter − 8V VCEO collector-emitter voltage open base − 5V Ic DC collector current − 6.5 mA Ptot total power dissipation up to T s = 167°C; note 1 − 30 mW fT transition frequency I C = 1 mA; VCE = 1 V; f = 500 MHz; Tamb =2 5°C 2.3 − GHz C re feedback capacitance I C = 1 mA; VCE = 1 V; f = 1 MHz; Tamb =2 5°C − 0.45 pF G UM maximum unilateral power gain IC = 1 mA; VCE = 1 V; f = 500 MHz; Tamb =2 5°C 18 − dB F noise figure I C = 1 mA; VCE = 1 V; f = 500 MHz; Tamb =2 5°C 3.8 − dB SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 8V VCEO collector-emitter voltage open base − 5V VEBO emitter-base voltage open collector − 2V IC DC collector current − 6.5 mA ICM peak collector current f > 1 MHz − 10 mA Ptot total power dissipation up to T s = 167°C; note 1 − 30 mW Tstg storage temperature −65 150 °C Tj junction temperature − 175 °C

Philips Semiconductors Product specification NPN 2 GHz wideband transistor BFT25 THERMAL RESISTANCE Note 1. Ts = is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj = 25°C unless otherwise specified. Note 1. G UM is the maximum unilateral power gain, assuming S12 is zero and SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE R th j-s thermal resistance from junction to soldering point up to Ts = 167°C; note 1 260 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = 5 V −− 50 nA hFE DC current gain I C = 10µA; VCE = 1 V 20 30 − IC = 1 mA; VCE = 1 V 20 40 − fT transition frequency I C = 1 mA; VCE = 1 V; f = 500 MHz 1.2 2.3 − GHz C c collector capacitance I E =ie = 0; VCB = 0.5 V; f = 1 MHz−− 0.6 pF C e emitter capacitance I c =ic =0 ;VEB = 0; f = 1 MHz −− 0.5 pF C re feedback capacitance I C = 1 mA; VCE = 1 V; f = 1 MHz; Tamb =2 5°C −− 0.45 pF G UM maximum unilateral power gain (note 1) IC = 1 mA; VCE = 1 V; f = 500 MHz; Tamb =2 5°C − 18 − dB IC = 1 mA; VCE = 1 V; f = 800 MHz; Tamb =2 5°C − 12 − dB F noise figure I C = 0.1 mA; VCE =1V ; f = 500 MHz; Tamb =2 5°C − 5.5 − dB IC = 1 mA; VCE = 1 V; f = 500 MHz; Tamb =2 5°C − 3.8 − dB G UM 10 log S 21 1S 11 –  1S 22 –

Philips Semiconductors Product specification NPN 2 GHz wideband transistor BFT25 Fig.2 DC current gain as a function of collector current. VCE = 1 V; Tj=2 5°C. handbook, halfpage MEA908 110–110–210–3 I (mA)C hFE Fig.3 Collector capacitance as a function of collector-base voltage. IE =ie = 0; f = 1 MHz; Tj=2 5°C. 024 8 0.8 MEA914 0.6 0.4 0.2 C c (pF) V CB (V) Fig.4 Transition frequency as a function of collector current. VCE = 1 V; f = 500 MHz; Tj=2 5°C. handbook, halfpage 0 0.5 1 2 MEA907 1.5 I (mA)C (GHz) Tf Fig.5 Minimum noise figure as a function of collector current. VCE = 1 V; ZS = opt.; f = 500 MHz; Tamb =2 5°C. handbook, halfpage MEA909 110–110–2 I (mA)C F (dB)

Philips Semiconductors Product specification NPN 2 GHz wideband transistor BFT25 handbook, full pagewidth MEA916 0.2 0.5 0.2 0.5 + j – j 10.2 10 520.5

800 MHz

Fig.6 Common emitter input reflection coefficient (S11). IC = 1 mA; VCE = 1 V; Tamb =2 5°C. Zo =5 0Ω . Fig.7 Common emitter forward transmission coefficient (S21). IC = 1 mA; VCE = 1 V; Tamb =2 5°C. handbook, full pagewidth MEA918 + ϕ − ϕ 30° 60° 90° 120° 150° 180° 150° 120° 90° 60° 30° 500

Philips Semiconductors Product specification NPN 2 GHz wideband transistor BFT25 handbook, full pagewidth MEA917 + ϕ − ϕ 30° 60° 90° 120° 150° 180° 150° 120° 90° 60° 30° 0.150.05 0.1 Fig.8 Common emitter reverse transmission coefficient (S12). IC = 1 mA; VCE = 1 V; Tamb =2 5°C. handbook, full pagewidth MEA915 0.2 0.5 0.2 0.5 + j – j 10.2 10 520.5 Fig.9 Common emitter output reflection coefficient (S22). IC = 1 mA; VCE = 1 V; Tamb =2 5°C. Zo =5 0Ω .

Philips Semiconductors Product specification NPN 2 GHz wideband transistor BFT25 PACKAGE OUTLINE UNIT A 1 max. bp cD E e1 H E Lp Qw v REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE 97-02-28 IEC JEDEC EIAJ mm 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 0.95 e 1.9 2.5 2.1 0.55 0.45 0.10.2 DIMENSIONS (mm are the original dimensions) 0.45 0.15 SOT23 bp D e A Lp Q detail X H E E w M v M A B AB 0 1 2 mm scale A 1.1 0.9 c X Plastic surface mounted package; 3 leads SOT23

Philips Semiconductors Product specification NPN 2 GHz wideband transistor BFT25 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.