BFS17A

BFS17A VISHAY

Document overview

• Manufacturer or author: Provided By www.digicamel.com(free datasheet download site)
• PDF pages: 11

Technical content

Features

/C0068Low noise figure /C0068High power gain /C0068Small collector capacitance 13 581 94 9280 BFS17A Marking: E2 Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter 13 581 9510527 BFS17AR Marking: E5 Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter 13 652 13 570 BFS17AW Marking: WE2 Plastic case (SOT 323) 1 = Collector, 2 = Base, 3 = Emitter Absolute Maximum Ratings Tamb = 25/C0095C, unless otherwise specified Parameter Test Conditions Symbol Value Unit Collector-base voltage VCBO 25 V Collector-emitter voltage VCEO 15 V Emitter-base voltage VEBO 2.5 V Collector current IC 25 mA Total power dissipation Tamb ≤ 60 /C0176C Ptot 200 mW Junction temperature Tj 150 /C0176C Storage temperature range Tstg –65 to +150 /C0176C

www.vishay.com Rev. 4, 20-Jan-992 (10) Document Number 85039 Maximum Thermal Resistance Tamb = 25/C0095C, unless otherwise specified Parameter Test Conditions Symbol Value Unit Junction ambienton glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35/C0109m Cu R thJA 450 K/W Electrical DC Characteristics Tamb = 25/C0095C, unless otherwise specified Parameter Test Conditions Symbol Min Typ Max Unit Collector cut-off current VCE = 25 V, VBE = 0 ICES 100 /C0109A Collector-base cut-off currentVCB = 10 V, IE = 0 ICBO 100 nA Emitter-base cut-off current VEB = 2.5 V, IC = 0 IEBO 10 /C0109A Collector-emitter breakdown voltageIC = 1 mA, IB = 0 V(BR)CEO 15 V Collector-emitter saturation voltageIC = 20 mA, IB = 2 mA VCEsat 0.1 0.6 V DC forward current transfer ratioVCE = 1 V, IC = 2 mA hFE 20 50 150 VCE = 1 V, IC = 25 mA hFE 20 Electrical AC Characteristics Tamb = 25/C0095C, unless otherwise specified Parameter Test Conditions Symbol Min Typ Max Unit Transition frequency VCE = 5 V, IC = 2 mA, f = 300 MHz fT 1.5 GHzqy VCE = 5 V, IC = 14 mA, f = 300 MHz fT 3.5 GHz VCE = 5 V, IC = 30 mA, f = 300 MHz fT 3 3.2 GHz Collector-base capacitanceVCB = 10 V, f = 1 MHz C cb 0.6 pF Collector-emitter capacitanceVCE = 5 V, f = 1 MHz C ce 0.1 pF Emitter-base capacitance VEB = 0.5 V, f = 1 MHz C eb 1.1 pF Noise figure VCE = 5 V, IC = 2 mA, ZS = 50 /C0087, f = 800 MHz F 2.5 dB Power gain VCE = 10 V, IC = 14 mA, ZS = 50 /C0087, f = 800 MHz G pe 13 dB Linear output voltage – two tone intermodulation test VCE = 10 V, IC = 14 mA, dIM = 60 dB, f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50 /C0087 V1 = V2 150 mV Third order intercept pointVCE = 10 V, IC = 14 mA, f = 800 MHz IP3 23.5 dBm

www.vishay.com Rev. 4, 20-Jan-99 3 (10) Document Number 85039 Common Emitter S–Parameters Z0 = 50 /C0087/C0044Tamb = 25/C0095C, unless otherwise specified S11 S21 S12 S22 VCE /V IC /mA f/MHz LIN MAG ANG LIN MAG ANG LIN MAG ANG LIN MAG ANG deg deg deg deg

www.vishay.com Rev. 4, 20-Jan-994 (10) Document Number 85039 S11 S21 S12 S22 VCE /V IC /mA f/MHz LIN MAG ANG LIN MAG ANG LIN MAG ANG LIN MAG ANG deg deg deg deg

www.vishay.com Rev. 4, 20-Jan-99 5 (10) Document Number 85039 S11 S21 S12 S22 VCE /V IC /mA f/MHz LIN MAG ANG LIN MAG ANG LIN MAG ANG LIN MAG ANG deg deg deg deg

2.0 GHz

Figure 5. Input reflection coefficient Figure 6. Forward transmission coefficient Figure 7. Reverse transmission coefficient Figure 8. Output reflection coefficient

www.vishay.com Rev. 4, 20-Jan-998 (10) Document Number 85039 Dimensions of BFS17A in mm 95 11346 Dimensions of BFS17AR in mm 95 11347

www.vishay.com Rev. 4, 20-Jan-99 9 (10) Document Number 85039 Dimensions of BFS17AW in mm 96 12236

www.vishay.com Rev. 4, 20-Jan-9910 (10) Document Number 85039 Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

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