BFQ31A ZETEX

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SOT23 NPN SILICON PLANAR

BFQ31A

VHF/UHF TRANSISTOR

ISSUE 4 – MARCH 2001

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PARTMARKING DETAILS BFQ31A – S4 BFQ31AR – S5

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V CBO 30 V
Collector-Emitter Voltage V CEO 15 V
Emitter-Base Voltage V EBO 3 V
Continuous Collector Current I C 100 mA
Base Current I B 50 mA
Power Dissipation at T =25°C amb P tot 330 mW
Operating and Storage Temperature Range T:T j stg -55 to +150 °C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).

PARAMETER SYMBOL BFQ31A UNIT CONDITIONS.
MIN. MAX.
Collector-Base Breakdown Voltage V (BR)CBO 30 V I =1.0µA, I =0 C E
Collector-Emitter Breakdown Voltage V (BR)CEO 15 V I =3mA, I =0* C B
Emitter-Base Breakdown Voltage V (BR)EBO 3 V I =10µA, I =0 E C
Collector Cut-Off Current I CBO 0.01 µA V =15V, I =0 CB E
Collector-Emitter Saturation Voltage V CE(sat) 0.4 V I =10mA, I =1mA C B
Base-Emitter Saturation Voltage V BE(sat) 1.0 V I =10mA, I =1mA C B
Static Forward Current Transfer Ratio h FE 100 I =3mA, V =1V C CE
Transition Frequency f T 600 MHz I =4mA, V =10V C CE f=100MHz
Output Capacitance C obo 1.7 pF V =10V, f=1MHz CB
Input Capacitance C ibo 2.0 pF V =0.5V, f=1MHz CB
Noise Figure N 6.0 dB I =1mA, V =6V C CE R =400Ω, f=60MHz s

\*Measured under pulsed conditions. Spice parameter data is available upon request for this device

TBA