BFM505 Dual NPN wideband transistor
Document overview
- Manufacturer or author: NXP Semiconductors
- PDF pages: 12
Technical content
Supersedes data of 1995 Sep 04
1996 Oct 08
Dual NPN wideband transistor
1996 Oct 08 2
NXP Semiconductors Product specification Dual NPN wideband transistor BFM505
FEATURES
Small size Temperature and hFE matched Low noise and high gain High gain at low current and low capacitance at low voltage Gold metallization ensures excellent reliability.
APPLICATIONS
Oscillator and buffer amplifiers Balanced amplifiers LNA/mixer.
DESCRIPTION
Dual transistor with two silicon NPN RF dies in a surface mount, 6-pin SOT363 (S-mini) package. The transistors are primarily intended for wideband applications in the GHz-range in the RF front end of analog and digital cellular phones, cordless phones, radar detectors, pagers and satellite TV-tuners. PINNING - SOT363A PIN SYMBOL DESCRIPTION 1 base 1 2e 1 emitter 1 3c 2 collector 2 4b 2 base 2 5e 2 emitter 2 6c 1 collector 1 Fig.1 Simplified outline and symbol. handbook, halfpage MAM210 1 3 Top view c1 c2 e1 e2 b1 b2 Marking code: N0. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Any single transistor Cre feedback capacitance Ie =0 ; VCB =3V ; f=1M H z 0.22 pF fT transition frequency IC =5m A ; VCE =3 V ; f=1G H z 9 GHz insertion power gain IC =5m A ; VCE = 3 V; f = 900 MHz; Tamb =2 5 C 14 15 dB GUM maximum unilateral power gain I C =5m A ; VCE = 3 V; f = 900 MHz; Tamb =2 5 C 17 dB F noise figure I C =1m A ; VCE = 3 V; f = 900 MHz; S = opt 1.1 1.6 dB Rth j-s thermal resistance from junction to soldering point single loaded 230 K/W double loaded 115 K/W s21
1996 Oct 08 3
NXP Semiconductors Product specification Dual NPN wideband transistor BFM505 LIMITING VALUES In accordance with the Absolute Maximum System IEC 134. THERMAL CHARACTERISTICS Note to the Limiting values and Thermal characteristics 1. T s is the temperature at the soldering point of the collector pin. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Any single transistor VCBO collector-base voltage open emitter 20 V VCEO collector-emitter voltage open base 8V VEBO emitter-base voltage open collector 2.5 V IC DC collector current 18 mA Ptot total power dissipation up to Ts =1 1 8C; note 1 500 mW Tstg storage temperature 65 +175 C Tj junction temperature 175 C SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-s thermal resistance from junction to soldering point; note 1 single loaded 230 K/W double loaded 115 K/W
1996 Oct 08 4
NXP Semiconductors Product specification Dual NPN wideband transistor BFM505 CHARACTERISTICS Tj =2 5 C unless otherwise specified. Note 1. G UM is the maximum unilateral power gain, assuming s12 is zero. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT DC characteristics of any single transistor V(BR)CBO collector-base breakdown voltage I C =2 . 5A; IE =0 2 0 V V(BR)CEO collector-emitter breakdown voltage I C =1 0 A; IB =0 8 V V(BR)EBO emitter-base breakdown voltage I E =2 . 5A; IC =0 2 . 5 V ICBO collector-base leakage current V CB =6V ; IE =0 50 nA hFE DC current gain IC =5m A ; VCE = 6 V 60 120 250 DC characteristics of the dual transistor FE ratio of highest and lowest DC current gain IC1 =I C2 =5m A ; VCE1 =V CE2 =6V 11 . 2 VBEO difference between highest and lowest base-emitter voltage (offset voltage) IE1 =I E2 =1 0m A ; Tamb =2 5 C0 1 mV AC characteristics of any single transistor fT transition frequency IC =5m A ; VCE =3V ; f=1G H z 9 GHz Cc collector capacitance IE =i e =0 ; VCB =3V ;f=1M H z 0.31 pF Cre feedback capacitance IC =0 ; VCB =3V ;f=1M H z 0.22 pF GUM maximum unilateral power gain; note 1 IC =5m A ; VCE =3V ; Tamb =2 5 C; f = 900 MHz 17 dB IC =5m A ; VCE =3V ; Tamb =2 5 C; f = 2 GHz 10 dB insertion power gain I C =5m A ; VCE =3V ; f=9 0 0M H z ; Tamb =2 5 C 14 15 dB F noise figure I C =5m A ; VCE =3V ; f=9 0 0M H z ; S = opt 1.4 1.8 dB IC =5m A ; VCE =3V ; f=2G H z ; S = opt 1.9 dB IC =1m A ; VCE =3V ; f=9 0 0M H z ; S = opt 1.1 1.6 dB s21 GUM 10 s21
1996 Oct 08 5
NXP Semiconductors Product specification Dual NPN wideband transistor BFM505 Fig.2 Power derating as a function of soldering point temperature; typical values. handbook, halfpage 0 50 100 200 400 MBG208 150 600 200 Ptot (mW) Ts (oC) double loaded single loaded Fig.3 Transition frequency as a function of collector current; typical values. f=1G H z ; Tamb =2 5 C. handbook, halfpage 10−1 101 fT (GHz) IC (mA) MGD687 VCE = 6V 3 V Fig.4 DC current gain as a function of collector current; typical values. VCE =6V . handbook, halfpage MRA719 250 100 150 200 hFE IC (mA) −2 10−110−3 1 10 102 Fig.5 Feedback capacitance as a function of collector-base voltage; typical values. IC =0 ; f=1M H z . handbook, halfpage 02 1 0 0.4 Cre (pF) 0.3 0.1 0.2 46 8 VCB (V) MRA720
1996 Oct 08 6
NXP Semiconductors Product specification Dual NPN wideband transistor BFM505 Fig.6 Gain as a function of collector current; typical values. f=9 0 0M H z ; VCE =3V . handbook, halfpage 048 1 2 MGG199 IC (mA) gain (dB) GUM MSG Fig.7 Gain as a function of collector current; typical values. f=2G H z ; VCE =3V . handbook, halfpage 048 1 2 MGG200 IC (mA) gain (dB) GUM MSG/Gmax Fig.8 Gain as a function of frequency; typical values. IC =1m A ; VCE =3V . handbook, halfpage50 MGG201 102 103 10410 f (MHz) gain (dB) GUM MSG/Gmax Fig.9 Gain as a function of frequency; typical values. IC = 5 mA; VCE =3V . handbook, halfpage50 MGG202 102 103 10410 f (MHz) gain (dB) GUM MSG/Gmax
1996 Oct 08 7
NXP Semiconductors Product specification Dual NPN wideband transistor BFM505 Fig.10 Minimum noise figure as a function of collector current; typical values. VCE =3V . handbook, halfpage 10−1 101 F (dB) IC (mA)
1000 MHz
2000 MHz
500 MHz
900 MHz
Fig.11 Associated available gain as a function of collector current; typical values. VCE =3V . handbook, halfpage 10−1 101 Gass (dB) IC (mA) MGD686 f = 900 MHz 1GHz
2 GHz
Fig.12 Minimum noise figure as a function of frequency; typical values. VCE =3V . handbook, halfpage MGC768 102 103 104 F (dB) f (MHz) 1.25 mA 5 mA Fig.13 Associated available gain as a function of frequency; typical values. VCE =3V . handbook, halfpage MGC769 102 103 104 Gass (dB) f (MHz) 5 mAIC = 1.25 mA
1996 Oct 08 8
NXP Semiconductors Product specification Dual NPN wideband transistor BFM505
APPLICATION INFORMATION
SPICE parameters for any single BFM505 die Note 1. These parameters have not been extracted, the default values are shown. SEQUENCE No. PARAMETER VALUE UNIT 1 IS 134.1 aA 2B F 1 8 0 . 0 3 NF 0.988 4V A F 3 8 . 3 4 V 5 IKF 150.0 mA 6I S E 2 7 . 8 1 f A 7 NE 2.051 8 BR 55.19 9 NR 0.982 10 VAR 2.459 V 11 IKR 2.920 mA 12 ISC 17.45 aA 13 NC 1.062 14 RB 20.00 15 IRB 1.000 A 16 RBM 20.00 17 RE 1.171 18 RC 4.350 (1) XTB 0.000 20(1) EG 1.110 eV 21(1) XTI 3.000 22 CJE 284.7 fF 23 VJE 600.0 mV 24 MJE 0.303 25 TF 7.037 ps 26 XTF 12.34 27 VTF 1.701 V 28 ITF 30.64 mA 29 PTF 0.000 deg 30 CJC 242.4 fF 31 VJC 188.6 mV 32 MJC 0.041 33 XCJC 0.130 34 TR 1.332 ns 35(1) CJS 0.000 F 36(1) VJS 750.0 mV 37(1) MJS 0.000 38 FC 0.897 Fig.14 Package equivalent circuit SOT363A (inductance only). handbook, halfpage B1 B2 C1 C2 LB LB E1 E2 MBG188 LP LP T1 T2 LELE Fig.15 Package capacitance (fF) between indicated nodes. 3E2 27 6 0.4 0.6 1.0 LP Lead inductances (nH) LB LE 3 17 36 B1 E2 E1 B2 C2 48 36 17 3 MBG189
1996 Oct 08 9
NXP Semiconductors Product specification Dual NPN wideband transistor BFM505 PACKAGE OUTLINE REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC JEITA SOT363 SC-88 wBMbp D e pin 1 index A Lp Q detail X HE E v M A AB y 0 1 2 mm scale c X 13 2 4 56 Plastic surface-mounted package; 6 leads SOT363 UNIT A1 max bp cD E e1 HE Lp Qy w v mm 0.1 0.30 0.20 2.2 1.8 0.25 0.10 1.35 1.15 0.65 e 1.3 2.2 2.0 0.2 0.10.2 DIMENSIONS (mm are the original dimensions) 0.45 0.15 0.25 0.15 A 1.1 0.8 04-11-08 06-03-16
1996 Oct 08 10
NXP Semiconductors Product specification Dual NPN wideband transistor BFM505 DATA SHEET STATUS Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. DEFINITIONS Product specification The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. DISCLAIMERS Limited warranty and liability Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products.
1996 Oct 08 11
NXP Semiconductors Product specification Dual NPN wideband transistor BFM505 NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Non-automotive qualified products Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications.
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