BFG94 NPN 6 GHz wideband transistor
Document overview
- Manufacturer or author: NXP Semiconductors
- PDF pages: 15
Technical content
Product specification September 1995 DISCRETE SEMICONDUCTORS BFG94 NPN 6 GHz wideband transistor
NXP Semiconductors Product specification NPN 6 GHz wideband transistor BFG94
FEATURES
High power gain Low noise figure Low intermodulation distortion Gold metallization ensures excellent reliability.
DESCRIPTION
NPN transistor mounted in a plastic SOT223 envelope. It is primarily intended for use in communication and instrumentation systems. PINNING PIN DESCRIPTION 1e m i t t e r 2b a s e 3e m i t t e r 4 collector Fig.1 SOT223. lfpage 4 123 MSB002 - 1Top view QUICK REFERENCE DATA Note 1. T s is the temperature at the soldering point of the collector tab. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter 15 V VCEO collector-emitter voltage open base 12 V IC DC collector current 60 mA Ptot total power dissipation up to Ts = 140 C (note 1) 700 mW Cre feedback capacitance IC = 0; VCE = 10 V; f = 1 MHz 0.8 pF fT transition frequency IC = 45 mA; VCE = 10 V; f = 1 GHz; Tamb = 25 C 46 GHz GUM maximum unilateral power gain I C = 45 mA; VCE = 10 V; f = 1 GHz; Tamb = 25 C 11.5 13.5 dB VO output voltage IC = 45 mA; VCE = 10 V; dim = 60 dB; RL = 75 ; f = 800 MHz; T amb = 25 C 500 mV PL1 output power at 1 dB gain compression IC = 45 mA; VCE = 10 V; f = 1 GHz; Tamb = 25 C 21.5 dBm
NXP Semiconductors Product specification NPN 6 GHz wideband transistor BFG94 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). THERMAL RESISTANCE Note 1. T s is the temperature at the soldering point of the collector tab. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter 15 V VCEO collector-emitter voltage open base 12 V VEBO emitter-base voltage open collector 2V IC DC collector current 60 mA Ptot total power dissipation up to Ts = 140 C( n o t e 1 ) 700 mW Tstg storage temperature 65 150 C Tj junction temperature 175 C SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE Rth j-s thermal resistance from junction to soldering point up to Ts = 140 C (note 1) 50 K/W
NXP Semiconductors Product specification NPN 6 GHz wideband transistor BFG94 CHARACTERISTICS Tj = 25 C unless otherwise specified. Notes 1. G UM is the maximum unilateral power gain, assuming S12 is zero and 2. d im = 60 dB (DIN 45004B, par 6.3: 3-tone); IC = 45 mA; VCE = 10 V; RL = 75 ; Tamb = 25 C; Vp = VO at dim = 60 dB; fp = 795.25 MHz; Vq = VO 6 dB; Vr = VO 6 dB; fq = 803.25 MHz; fr = 805.25 MHz; measured at f(p+qr) = 793.25 MHz. 3. I C = 45 mA; VCE = 10 V; RL = 75 ; Tamb = 25 C; Vq = VO = 280 mV; fp = 250 MHz; fq = 560 MHz; measured at f(p+q) = 810 MHz. 4. I C = 45 mA; VCE = 10 V; RL = 50 ;T amb = 25 C; fp = 1000 MHz; fq = 1001 MHz; measured at f(2pq) and f(2qp). SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = 10 V 100 nA hFE DC current gain IC = 30 mA; VCE = 5 V 45 90 IC = 45 mA; VCE = 10 V 100 Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz 0.9 2 pF Ce emitter capacitance IC = ie = 0; VEB = 0.5 V; f = 1 MHz 2.9 4.5 pF Cre feedback capacitance IC = ic = 0; VCE = 10 V; f = 1 MHz 0.5 0.8 pF fT transition frequency IC = 45 mA; VCE = 10 V; f = 1 GHz; Tamb = 25 C 4 GHz IC = 30 mA; VCE = 5 V; f = 1 GHz; Tamb = 25 C 46 GHz GUM maximum unilateral power gain (note1) IC = 45 mA; VCE = 10 V; f = 1 GHz; Tamb = 25 C 11.5 13.5 dB F minimum noise figure s = opt; IC = 45 mA; V CE = 10 V; f = 500 MHz 2.7 dB s = opt; IC = 45 mA; V CE = 10 V; f = 1 GHz 3 dB VO output voltage note 2 500 mV d2 second order intermodulation distortion note 3 51 dB PL1 output power at 1 dB gain compression IC = 45 mA; VCE = 10 V; R L = 50 ; Tamb = 25 C; measured at f = 1 GHz 21.5 dBm ITO third order inte rcept point note 4 34 dBm GUM 10 S21 1S 11 2– 1S 22 2–
NXP Semiconductors Product specification NPN 6 GHz wideband transistor BFG94 Fig.2 Test circuit for second and third order intermodulation distortion. L1 = L3 = 5 H micro-choke. L2 = 1 turn copper wire (0.4 mm), internal diameter 4 mm. MBB780 10 kΩ L2 1 nF output 75 Ω247 Ω 1 nF 1 nF DUT input 75 Ω +VBB +VCC 2 pF 33 Ω 33 Ω Fig.3 Measurement set-up for third order intercept point and 1 dB gain compression. MBB789 INPUT SLUG TUNER OUTPUT SLUG TUNER BIAS TEE input output DUT TEST FIXTURE BIAS TEE Fig.4 Power derating curve. handbook, halfpage 0 50 100 200 800 600 200 400 MBB790 150 Ts (°C) Ptot (mW) Fig.5 DC current gain as a function of collector current. VCE = 10 V; Tj =2 5 C handbook, halfpage 01 0 2 0 3 0 120 MCD087 hFE I (mA)C
NXP Semiconductors Product specification NPN 6 GHz wideband transistor BFG94 Fig.6 Feedback capacitance as a function of collector-emitter voltage. IC = ic = 0; f = 1 MHz. handbook, halfpage V CE (V) 048 1 6 0.8 MBB791 0.6 0.4 0.2 C re (pF) Fig.7 Transition frequency as a function of collector current. VCE = 10 V; f = 1 GHz. handbook, halfpage 01 0 2 0 4 0 MCD089 I (mA)C (GHz) Tf Fig.8 Maximum unilateral power gain as a function of frequency. Ic =4 5 m A ; VCE =1 0 V . handbook, halfpage MBB792 40 400 4000 f (MHz) G UM (dB) Fig.9 Maximum unilateral power gain as a function of frequency. Ic =2 0 m A ; VCE =8 V . handbook, halfpage40 MBB793 102 103 104 f (MHz) G UM (dB)
NXP Semiconductors Product specification NPN 6 GHz wideband transistor BFG94 Fig.10 Maximum available stable gain as a function of frequency. Ic =2 0 m A ; VCE =8 V . handbook, halfpage20 MBB794 102 103 104 f (MHz) Gmax (dB) Fig.11 Gain as a function of collector current. VCE = 8 V; f = 1 GHz. Gmax = maximum available stable gain. GUM = maximum unilateral power gain. handbook, halfpage MBB795 10 20 30 40 gain (dB) I (mA)C Gmax GUM Fig.12 Second order intermodulation distortion as a function of collector current. Ic =4 5 m A ; VCE = 10 V; f(pq) = 810 MHz. See test circuit, Fig.2 handbook, halfpage 10 30 70 MBB782 I (mA)C (dB) Fig.13 Third order intermodulation distortion as a function of collector current. Ic =4 5 m A ; VCE =1 0 V ; f(pqr) = 793.25 MHz. See test circuit, Fig.2 handbook, halfpage 10 30 70 MBB781 I (mA)C (dB)
NXP Semiconductors Product specification NPN 6 GHz wideband transistor BFG94 Fig.14 Minimum noise figure as a function of collector current. VCE =8 V . handbook, halfpage4 MCD094 101 F (dB) I (mA)C f = 2 GHz
500 MHz
1 GHz
NXP Semiconductors Product specification NPN 6 GHz wideband transistor BFG94 handbook, full pagewidth MBB788 0.2 0.2 0.5 + j − j 5 dB unstable region stability circle 0.5 10 520.50.2 F = 1.80 dBmin OPT 2 dB 2.5 dB 3 dB 4 dB Fig.15 Noise circle. Ic =1 5 m A ; VCE = 10 V; f = 500 MHz. handbook, full pagewidth MBB787 0.2 0.5 0.2 0.5 + j − j 3 dB 4 dB 11 052 0.5 0.2 F = 2.25 dBmin OPT 2.5 dB 3.5 dB 5 dB Fig.16 Noise circle. Ic =1 5 m A ; VCE = 10 V; f =1 GHz.
NXP Semiconductors Product specification NPN 6 GHz wideband transistor BFG94 handbook, full pagewidth MBB784 100 250 100 250 + j – j
3 GHz
40 MHz
Fig.17 Common emitter input reflection coefficient (S11). IC =4 5 m A ; VCE =1 0 V . ZO =5 0 . handbook, full pagewidth MBB786 180° + ϕ − ϕ 30° 60° 90° 120° 150° 150° 120° 90° 60° 30° Fig.18 Common emitter forward transmission coefficient (S21). IC =4 5 m A ; VCE =1 0 V .
NXP Semiconductors Product specification NPN 6 GHz wideband transistor BFG94 handbook, full pagewidth MBB785 180° + ϕ − ϕ 30° 60° 90° 120° 150° 150° 120° 90° 60° 30° 40 2050 30 10 Fig.19 Common emitter reverse transmission coefficient (S12). IC =4 5 m A ; VCE =1 0 V . handbook, full pagewidth MBB783 100 250 100 250 + j – j 10 25 100 25050 Fig.20 Common emitter output reflection coefficient (S22). IC =4 5 m A ; VCE =1 0 V . ZO =5 0 .
NXP Semiconductors Product specification NPN 6 GHz wideband transistor BFG94 PACKAGE OUTLINE UNIT A1 bp cD E e1 HE Lp Qy w v REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC JEITA mm 0.10 0.01 1.8 1.5 0.80 0.60 b 3.1 2.9 0.32 0.22 6.7 6.3 3.7 3.3 2.3 e 4.6 7.3 6.7 1.1 0.7 0.95 0.85 0.1 0.10.2 DIMENSIONS (mm are the original dimensions) SOT223 SC-73 04-11-10 06-03-16 w Mbp D e A Lp Q detail X HE E v M A AB B c y 0 2 4 mm scale A X 13 2 Plastic surface-mounted package with increased heatsink; 4 leads SOT223
NXP Semiconductors Product specification NPN 6 GHz wideband transistor BFG94 DATA SHEET STATUS Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. DEFINITIONS Product specification The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. DISCLAIMERS Limited warranty and liability Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products.
NXP Semiconductors Product specification NPN 6 GHz wideband transistor BFG94 NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Non-automotive qualified products Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications.
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