BFG591 NPN 7 GHz wideband transistor
Document overview
- Manufacturer or author: NXP Semiconductors
- PDF pages: 14
Technical content
Supersedes data of November 1992
1995 Sep 04
NPN 7 GHz wideband transistor
1995 Sep 04 2
NXP Semiconductors Product specification NPN 7 GHz wideband transistor BFG591
FEATURES
High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability.
APPLICATIONS
Intended for applications in the GHz range such as MATV or CATV amplifiers and RF communications subscriber equipment.
DESCRIPTION
NPN silicon planar epitaxial transistor in a plastic, 4-pin SOT223 package. PINNING PIN DESCRIPTION 1e m i t t e r 2b a s e 3e m i t t e r 4 collector Fig.1 SOT223. lfpage 4 123 MSB002 - 1Top view QUICK REFERENCE DATA Note 1. T s is the temperature at the soldering point of the collector pin. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter 20 V VCEO collector-emitter voltage open base 15 V IC collector current (DC) 200 mA Ptot total power dissipation up to T s =8 0 C; note 1 2W hFE DC current gain IC =7 0m A ; VCE =8V 6 0 9 0 2 5 0 Cre feedback capacitance I C =I c =0 ; VCE =1 2V ; f=1M H z 0.7 pF fT transition frequency I C =7 0m A ; VCE =1 2V ; f=1G H z 7 GHz GUM maximum unilateral power gain IC =7 0m A ; VCE =1 2V ; f=9 0 0M H z ; Tamb =2 5 C 13 dB insertion power gain I C =7 0m A ; VCE =1 2V ; f=9 0 0M H z ; Tamb =2 5 C 12 dBs21
1995 Sep 04 3
NXP Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). THERMAL CHARACTERISTICS Note to the Limiting values and Thermal characteristics 1. T s is the temperature at the soldering point of the collector pin. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter 20 V VCEO collector-emitter voltage open base 15 V VEBO emitter-base voltage open collector 3V IC collector current (DC) 200 mA Ptot total power dissipation up to Ts =8 0 C; note 1 2W Tstg storage temperature 65 +150 C Tj junction temperature 150 C SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-s thermal resistance from junction to soldering point note 1 35 K/W
1995 Sep 04 4
NXP Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 CHARACTERISTICS Tj =2 5 C (unless otherwise specified). Notes 1. G UM is the maximum unilateral power gain, assuming s12 is zero. 2. d im = 60 dB (DIN45004B); Vp =V o; Vq =V o 6d B ; Vr =V o 6d B ; SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)CBO collector-base breakdown voltage I C = 0.1 mA; IE =0 2 0 V V(BR)CES collector-emitter breakdown voltage I C =1 0m A ; IB =0 1 5 V V(BR)EBO emitter-base breakdown voltage I E =0 . 1m A ; IC =0 3 V ICBO collector-base leakage current I E =0 ; VCB =1 0V 100 nA hFE DC current gain IC =7 0m A ; VCE =8V 6 0 9 0 2 5 0 Cre feedback capacitance IB =I b =0 ; VCE =1 2V ; f=1M H z 0.7 pF fT transition frequency IC =7 0m A ; VCE =1 2V ; f=1G H z 7 GHz GUM maximum unilateral power gain; note 1 IC =7 0m A ; VCE =1 2V ; f=9 0 0M H z ; Tamb =2 5 C 13 dB IC =7 0m A ; VCE =1 2V ; f=2G H z ; Tamb =2 5 C 7.5 dB insertion power gain I C =7 0m A ; VCE =1 2V ; f=1G H z ; Tamb =2 5 C 12 dB Vo output voltage note 2 700 mV s21 GUM 10 s21 2 1s 11 2– 1s 22 2–
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NXP Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 0 50 100 200 2.0 MGC791 150 2.5 3.0 0.5 1.0 1.5 Ptot (W) Ts (oC) Fig.2 Power derating curve. VCE =1 2V . Fig.3 DC current gain as a function of collector current, typical values. handbook, halfpage 250 100 150 200 MRA749 10−2 10−1 11 0 1 0 2 hFE IC (mA) handbook, halfpage 1.2 0.8 0.4 41 6 MGC792 Cre (pF) VCB (V) IC =0 ; f=1M H z . Fig.4 Feedback capacitance as a function of collector-base voltage, typical values. handbook, halfpage8 (GHz) fT 102 MGC793 IC (mA) Fig.5 Transition frequency as a function of collector current, typical values. f=1G H z ; VCE =1 2V .
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NXP Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 handbook, halfpage 04 0 8 0 Gmax IC (mA) 120 gain (dB) MGC795 GUM f=9 0 0M H z ; VCE =1 2V . Fig.6 Gain as a function of collector current; typical values. handbook, halfpage 04 0 8 0 Gmax GUM IC (mA) 120 gain (dB) MGC794 f=2G H z ; VCE =1 2V . Fig.7 Gain as a function of collector current; typical values. handbook, halfpage50 MGC796 102 103 104 gain (dB) f (MHz) G UM G max MSG IC =7 0m A ; VCE =1 2V . Fig.8 Gain as a function of frequency; typical values.
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NXP Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 handbook, halfpage 04 0 8 0 IC (mA) 120 −20 dim (dB) −70 −30 MGC797 −40 −50 −60 Fig.9 Intermodulation distortion as a function of collector current; typical values. VCE =1 2V ; Vo =7 0 0m V ; f(p+q-r) =7 9 3 . 2 5M H z . handbook, halfpage 04 0 8 0 IC (mA) 120 −20 (dB) −70 −30 MGC798 −40 −50 −60 Fig.10 Second order Intermodulation distortion as a function of collector current; typical values. VCE =1 2V ; Vo =3 1 6m V ; f(p+q) = 810 MHz.
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NXP Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 handbook, full pagewidth MGC799 00o 0.2 0.6 0.4 0.8 1.0 1.0 45o 90o 135o 180o 45o 90o 135o 0.5 0.2 0.5 0.2 0.5 2
40 MHz
3 GHz
0.2 1 5 VCE =1 2V ; IC =7 0m A ; Zo =5 0 Fig.11 Common emitter input reflection coefficient (s11); typical values. handbook, full pagewidth MGC800 0 o 90o 135o 180 o 90o 50 40 30 20 10 45o 135o 45o VCE =1 2V ; IC =7 0m A . Fig.12 Common emitter forward transmission coefficient (s21); typical values.
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NXP Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 handbook, full pagewidth MGC801 0 o 90o 135o 180 o 90o 45o 135o 45o VCE =1 2V ; IC =7 0m A . Fig.13 Common emitter reverse transmission coefficient (s12); typical values. handbook, full pagewidth MGC802 00o 0.2 0.6 0.4 0.8 1.0 1.0 45o 90o 135o 180o 45o 90o 135o 0.5 0.2 0.2 0.5 0.2 1 2 5 0.5 VCE =1 2V ; IC =7 0m A ; Zo =5 0 Fig.14 Common emitter output reflection coefficient (s22); typical values.
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NXP Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 SPICE parameters for the BFG591 crystal Note 1. These parameters have not been extracted, the default values are shown. SEQUENCE No. PARAMETER VALUE UNIT 1 IS 1.341 fA 2B F 1 2 3 . 5 3N F . 9 8 8 m 4V A F 7 5 . 8 5 V 5 IKF 9.656 A 6 ISE 232.2 fA 7 NE 2.134 8 BR 10.22 9 NR 1.016 10 VAR 1.992 V 11 IKR 294.1 mA 12 ISC 211.0 aA 13 NC 997.2 14 RB 5.00 15 IRB 1.000 A 16 RBM 5.00 17 RE 1.275 18 RC 920.6 m (1) XTB 0.000 20 (1) EG 1.110 EV 21 (1) XTI 3.000 22 CJE 3.821 pF 23 VJE 600.0 mV 24 MJE 348.5 m 25 TF 13.60 ps 26 XTF 71.73 27 VTF 10.28 V 28 ITF 1.929 A 29 PTF 0.000 deg 30 CJC 1.409 pF 31 VJC 219.4 mV 32 MJC 166.5 m 33 XCJ 2.340 m 34 TR 543.7 ns 35 (1) CJS 0.000 F 36 (1) VJS 750.0 mV 37 (1) MJS 0.000 38 FC 733.2 m List of components (see Fig.15) DESIGNATION VALUE UNIT Cbe 182 fF Ccb 16 fF Cce 249 fF L1 0.025 nH L2 1.19 nH L3 0.60 nH LB 1.50 nH LE 0.50 nH QLB =5 0 ; Q LE = 50; QLB,E(f) = QLB,E(f/fc); fc = scaling frequency = 1 GHz. Fig.15 Package equivalent circuit SOT223. handbook, halfpage MBC964 B E CB' C' L B LE L1 L2 Ccb Cbe ceC
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NXP Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 PACKAGE OUTLINE UNIT A1 bp cD E e1 HE Lp Qy w v REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC JEITA mm 0.10 0.01 1.8 1.5 0.80 0.60 b 3.1 2.9 0.32 0.22 6.7 6.3 3.7 3.3 2.3 e 4.6 7.3 6.7 1.1 0.7 0.95 0.85 0.1 0.10.2 DIMENSIONS (mm are the original dimensions) SOT223 SC-73 04-11-10 06-03-16 w Mbp D e A Lp Q detail X HE E v M A AB B c y 0 2 4 mm scale A X 13 2 Plastic surface-mounted package with increased heatsink; 4 leads SOT223
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NXP Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 DATA SHEET STATUS Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. DEFINITIONS Product specification The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. DISCLAIMERS Limited warranty and liability Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products.
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NXP Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Non-automotive qualified products Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications.
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