BFG425W ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 iscSiliconNPNRFTransistor BFG425W
DESCRIPTION
- High PowerGain
- High CurrentGain Bandwidth Product
- LowNoiseFigure
- Minimum Lot-to-Lotvariationsforrobustdevice performanceandreliable operation
APPLICATIONS
- Designedforusein RFwideband amplifiersand oscillators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage 10 V VCEO Collector-EmitterVoltage 4.5 V VEBO Emitter-BaseVoltage 1 V IC CollectorCurrent-Continuous 30 mA IB BaseCurrent-Continuous 6 mA PC CollectorPowerDissipation 135 mW TJ JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -65~150 ℃
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 iscSiliconNPNRFTransistor BFG425W ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-EmitterBreakdownVoltage IC=1mA;IB=0 4.5 V ICBO CollectorCutoffCurrent VCB=4.5V;IE=0 100 nA hFE DCCurrentGain IC=25mA;VCE=2V 50 100 150 fT Transitionfrequency IC=25mA;VCE=2V;f=2GHz 25 GHz NF NoiseFigure IC=2mA;VCE=2V;f=900MHz 0.8 dB NF NoiseFigure IC=2mA;VCE=2V;f=2GHz 1.2 dB ︱S21e︱2 InsertionPower Gain IC=30mA;VCE=8V;f=2GHz 17 dB