BF908R Datasheet | DigiCamel IC Datasheet

Manufacturer Specifications

Compare BF908R variants.

Select a manufacturer to view its specifications, local PDF, and searchable HTML text.

1 manufacturers / 3 documents

Manufacturer	Series	Package	Documents	Available	Select specification
NXP Semiconductors	-	-	3	PDF HTML	Viewing

Online Datasheet

Read the NXP Semiconductors document online.

BF908 PHILIPS

Document overview

Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
PDF pages: 8

Technical content

Product speciﬁcation Supersedes data of April 1995 File under Discrete Semiconductors, SC07

1996 Jul 30

BF908; BF908R Dual-gate MOS-FETs

1996 Jul 30 2

Philips Semiconductors Product speciﬁcation Dual-gate MOS-FETs BF908; BF908R

FEATURES

High forward transfer admittance
Short channel transistor with high forward transfer admittance to input capacitance ratio
Low noise gain controlled amplifier up to 1 GHz.

APPLICATIONS

VHF and UHF applications with 12 V supply voltage, such as television tuners and professional communications equipment.

DESCRIPTION

Depletion type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The transistors are protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. PINNING CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. PIN SYMBOL DESCRIPTION 1 s, b source 2 d drain 2 gate 2 4g 1 gate 1 Fig.1 Simplified outline (SOT143) and symbol; BF908. handbook, halfpage s,b d Top view MAM039 Fig.2 Simplified outline (SOT143R) and symbol; BF908R. handbook, halfpage s,b d MAM040 Top view QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VDS drain-source voltage −− 12 V ID drain current −− 40 mA Ptot total power dissipation −− 200 mW Tj operating junction temperature −− 150 °C yfs forward transfer admittance 36 43 50 mS C ig1-s input capacitance at gate 1 2.4 3.1 4 pF C rs reverse transfer capacitance f = 1 MHz 20 30 45 pF F noise ﬁgure f = 800 MHz − 1.5 2.5 dB

1996 Jul 30 3

Philips Semiconductors Product speciﬁcation Dual-gate MOS-FETs BF908; BF908R LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Device mounted on a printed-circuit board. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 12 V ID drain current − 40 mA ±IG1 gate 1 current − 10 mA ±IG2 gate 2 current − 10 mA Ptot total power dissipation see Fig.3; note 1 BF908 up to T amb =5 0°C − 200 mW BF908R up to T amb =4 0°C − 200 mW Tstg storage temperature −65 +150 °C Tj operating junction temperature − 150 °C Fig.3 Power derating curves. handbook, halfpage 100 150 200 250 0 50 100 150 200 BF908 BF908R Ptot (mW) Tamb ( C)o MRC275

1996 Jul 30 4

Philips Semiconductors Product speciﬁcation Dual-gate MOS-FETs BF908; BF908R THERMAL CHARACTERISTICS Note 1. Device mounted on a printed-circuit board. STATIC CHARACTERISTICS Tj=2 5°C; unless otherwise speciﬁed. DYNAMIC CHARACTERISTICS Common source; Tamb =2 5°C; VDS =8V ; VG2-S =4V ; ID = 15 mA; unless otherwise speciﬁed. SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-a thermal resistance from junction to ambient note 1 BF908 500 K/W BF908R 550 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ±V(BR)G1-SS gate 1-source breakdown voltage VG2-S =V DS = 0; IG1-S =1 0m A 8 − 20 V ±V(BR)G2-SS gate 2-source breakdown voltage VG1-S =V DS = 0; IG2-S =1 0m A 8 − 20 V −V(P)G1-S gate 1-source cut-off voltage VG2-S =4V ; VDS =8V ; ID =2 0µA −− 2V −V(P)G2-S gate 2-source cut-off voltage VG1-S =4V ; VDS =8V ; ID =2 0µA −− 1.5 V IDSS drain-source current V G2-S =4V ; VDS =8V ; VG1-S = 0 3 1 52 7m A ±IG1-SS gate 1 cut-off current V G2-S =V DS = 0; VG1-S =5V −− 50 nA ±IG2-SS gate 2 cut-off current V G1-S =V DS = 0; VG2-S =5V −− 50 nA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT yfs forward transfer admittance pulsed; Tj=2 5°C; f = 1 MHz 36 43 50 mS C ig1-s input capacitance at gate 1 f = 1 MHz 2.4 3.1 4 pF C ig2-s input capacitance at gate 2 f = 1 MHz 1.2 1.8 2.5 pF C os output capacitance f = 1 MHz 1.2 1.7 2.2 pF C rs reverse transfer capacitance f = 1 MHz 20 30 45 fF F noise ﬁgure f = 200 MHz; G S = 2 mS; BS =B Sopt − 0.6 1.2 dB f = 800 MHz; GS =G Sopt; BS =B Sopt − 1.5 2.5 dB

1996 Jul 30 5

Philips Semiconductors Product speciﬁcation Dual-gate MOS-FETs BF908; BF908R Fig.4 Transfer characteristics; typical values. VDS = 8 V; Tj=2 5°C. handbook, halfpage VG1-S (V) 3 V 2 V 1.5 V 0.5 V 0 V 0.6 MRC281 VG2-S = 4 V 1 V ID (mA) Fig.5 Output characteristics; typical values. VG2-S = 4 V; Tj=2 5°C. handbook, halfpage 048 1 6 MRC282 VDS (V) ID (mA) 0.2 V 0.1 V 0 V −0.3 V −0.2 V −0.1 V VG1-S = 0.3 V Fig.6 Forward transfer admittance as a function of drain current; typical values. VDS = 8 V; Tj=2 5°C. 0 5 10 15 20 25 0.5 V 1 V 1.5 V 2 V 3 V 4 V VG2-S = 0 V Yfs (mS) ID (mA) MRC280 Fig.7 Forward transfer admittance as a function of junction temperature; typical values. 0 40 80 120 16040 Yfs (mS) T j( C)o MRC276 VDS = 8 V; VG2-S = 4 V; ID =1 5m A .

1996 Jul 30 6

Philips Semiconductors Product speciﬁcation Dual-gate MOS-FETs BF908; BF908R Table 1 Scattering parameters Table 2 Noise data f (MHz) s11 s21 s12 s22 MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) VDS =8V ; VG2-S =4V ; ID = 10 mA; Tamb =2 5°C. VDS =8V ; VG2-S =4V ; ID = 15 mA; Tamb =2 5°C. f (MHz) Fmin (dB) Γopt rn (ratio) (deg) VDS =8V ; VG2-S =4V ; ID = 10 mA; Tamb =2 5°C. 800 1.50 0.720 56.7 0.580 VDS =8V ; VG2-S =4V ; ID = 15 mA; Tamb =2 5°C. 800 1.50 0.700 59.2 0.520

1996 Jul 30 7

Philips Semiconductors Product speciﬁcation Dual-gate MOS-FETs BF908; BF908R PACKAGE OUTLINES Fig.8 SOT143. Dimensions in mm. handbook, full pagewidth MBC845 max o max o max o 1.1 max 0.75 0.60 0.150 0.090 0.1 max M0.1 AB0 0.10.48 TOP VIEW 1.4 1.2 2.5 max 3.0 2.8 M0.2 ABA B 1.9 0.10.88 1.7 Fig.9 SOT143R. Dimensions in mm. handbook, full pagewidth MBC844 max o max o max o 1.1 max 0.40 0.25 0.150 0.090 0.1 max 1.4 1.2 2.5 max 3.0 2.8 A B 1.9 M0.2 A M0.1 B TOP VIEW 0.48 0.38 0.88 0.78 1.7

1996 Jul 30 8

Philips Semiconductors Product speciﬁcation Dual-gate MOS-FETs BF908; BF908R DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development. Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later. Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

Selected Specification

NXP Semiconductors BF908R overview.

Summary

Dual-gate MOS-FETs 1996 Jul 30

Description

Dual-gate MOS-FETs 1996 Jul 30

Source title BF908R Datasheet(PDF) - NXP Semiconductors

Related Parts

More parts from the same family.

Browse manufacturer