BF904

BF904 PHILIPS

Document overview

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Technical content

Product specification Supersedes data of 1997 Sep 05

1999 May 17

BF904; BF904R N-channel dual gate MOS-FETs

1999 May 17 2

Philips Semiconductors Product specification N-channel dual gate MOS-FETs BF904; BF904R

FEATURES

• Specially designed for use at 5 V supply voltage
• Short channel transistor with high transfer admittance to input capacitance ratio
• Low noise gain controlled amplifier up to 1 GHz
• Superior cross-modulation performance during AGC.

APPLICATIONS

• VHF and UHF applications with 3 to 7 V supply voltage such as television tuners and professional communications equipment.

DESCRIPTION

Enhancement type field-effect transistor in a plastic microminiature SOT143B and SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. PINNING CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. PIN SYMBOL DESCRIPTION 1 s, b source 2 d drain 2 gate 2 4g 1 gate 1 Fig.1 Simplified outline (SOT143B) and symbol. BF904 marking code: M04. handbook, halfpage Top view MAM124 s,b d Fig.2 Simplified outline (SOT143R) and symbol. BF904R marking code: M06. handbook, halfpage Top view MAM125 - 1 s,b d QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VDS drain-source voltage −− 7V ID drain current −− 30 mA Ptot total power dissipation −− 200 mW Tj operating junction temperature −− 150 °C yfs forward transfer admittance 22 25 30 mS C ig1-s input capacitance at gate 1 − 2.2 2.6 pF C rs reverse transfer capacitance f = 1 MHz − 25 35 fF F noise figure f = 800 MHz − 2 − dB

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Philips Semiconductors Product specification N-channel dual gate MOS-FETs BF904; BF904R LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Device mounted on a printed-circuit board. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 7V ID drain current − 30 mA IG1 gate 1 current −± 10 mA IG2 gate 2 current −± 10 mA Ptot total power dissipation see Fig.3 BF904 T amb ≤ 50 °C; note 1 − 200 mW BF904R T amb ≤ 40 °C; note 1 − 200 mW Tstg storage temperature −65 +150 °C Tj operating junction temperature − 150 °C Fig.3 Power derating curves. handbook, halfpage 100 150 200 250 0 50 100 150 200 Ptot (mW) MRA770 Tamb ( C)o BF904 BF904R

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Philips Semiconductors Product specification N-channel dual gate MOS-FETs BF904; BF904R THERMAL CHARACTERISTICS Notes 1. Device mounted on a printed-circuit board. 2. Ts is the temperature at the soldering point of the source lead. STATIC CHARACTERISTICS Tj=2 5°C unless otherwise specified. Note 1. R G1 connects gate 1 to VGG = 5 V; see Fig.20. DYNAMIC CHARACTERISTICS Common source; Tamb =2 5°C; VDS = 5 V; VG2-S = 4 V; ID = 10 mA; unless otherwise specified. SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-a thermal resistance from junction to ambient note 1 BF904 500 K/W BF904R 550 K/W R th j-s thermal resistance from junction to soldering point note 2 BF904 T s =9 2°C 290 K/W BF904R T s =7 8°C 360 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V(BR)G1-SS gate 1-source breakdown voltage VG2-S =V DS = 0; IG1-S = 10 mA 6 15 V V(BR)G2-SS gate 2-source breakdown voltage VG1-S =V DS = 0; IG2-S = 10 mA 6 15 V V(F)S-G1 forward source-gate 1 voltage V G2-S =V DS = 0; IS-G1 = 10 mA 0.5 1.5 V V(F)S-G2 forward source-gate 2 voltage V G1-S =V DS = 0; IS-G2 = 10 mA 0.5 1.5 V VG1-S(th) gate 1-source threshold voltage VG2-S =4V ; VDS =5V ; ID =2 0µA 0.3 1 V VG2-S(th) gate 2-source threshold voltage VG1-S =V DS =5V ; ID =2 0µA 0.3 1.2 V IDSX drain-source current V G2-S =4V ; VDS =5V ; R G1 = 120 kΩ ; note 1 81 3 m A IG1-SS gate 1 cut-off current V G2-S =V DS = 0; VG1-S =5V − 50 nA IG2-SS gate 2 cut-off current V G1-S =V DS = 0; VG2-S =5V − 50 nA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT yfs forward transfer admittance pulsed; Tj=2 5°C 2 22 53 0m S C ig1-s input capacitance at gate 1 f = 1 MHz − 2.2 2.6 pF C ig2-s input capacitance at gate 2 f = 1 MHz 1 1.5 2 pF C os drain-source capacitance f = 1 MHz 1 1.3 1.6 pF C rs reverse transfer capacitance f = 1 MHz − 25 35 fF F noise figure f = 200 MHz; G S = 2 mS; BS =B Sopt − 1 1.5 dB f = 800 MHz; GS =G Sopt; BS =B Sopt − 2 2.8 dB

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Philips Semiconductors Product specification N-channel dual gate MOS-FETs BF904; BF904R Fig.4 Transfer admittance as a function of the junction temperature; typical values. 50 0 50 150 MLD268 100 T ( C)o j Y fs (mS) Fig.5 Typical gain reduction as a function of the AGC voltage. f = 50 MHz. handbook, halfpage0 01234 V (V)AGC gain reduction (dB) MRA769 Fig.6 Unwanted voltage for 1% cross-modulation as a function of gain reduction; typical values; see Fig.20. VDS = 5 V; VGG = 5 V; fw = 50 MHz. funw = 60 MHz; Tamb =2 5°C; RG1 = 120 kΩ. handbook, halfpage 100 110 120 0 1 02 03 04 05 0 Vunw (dB V) gain reduction (dB) MRA771 µ Fig.7 Transfer characteristics; typical values. VDS =5V . Tj=2 5°C. 0.4 2.0 MLD270 0.8 1.2 1.6 ID (mA) V (V)G1 S 2 V 1.5 V 1 V V = 4 V3 V 2.5 VG2 S

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Philips Semiconductors Product specification N-channel dual gate MOS-FETs BF904; BF904R Fig.8 Output characteristics; typical values. VG2-S =4V . Tj=2 5°C. handbook, halfpage 21 0 MLD269 468 ID (mA) V (V)DS 1.3 V 1.2 V 1.1 V 1.0 V 0.9 V V = 1.4 VG1 S Fig.9 Gate 1 current as a function of gate 1 voltage; typical values. VDS =5V . Tj=2 5°C. handbook, halfpage 150 100 0.5 2.5 MLD271 1.0 1.5 2.0 IG1 (µA) V (V)G1 S 3.5 V 2.5 V 2 V 3 V V = 4 VG2 S Fig.10 Forward transfer admittance as a function of drain current; typical values. VDS =5V . Tj=2 5°C. handbook, halfpage 4 8 12 16 20 MLD272 yfs (mS) I (mA)D 3 V 2.5 V 2 V V = 4 VG2 S 3.5 V Fig.11 Drain current as a function of gate 1 current; typical values. VDS =5V . VG2-S =4V . Tj=2 5°C. handbook, halfpage 10 50 MLD273 20 30 40 ID (mA) I (µA)G1

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Philips Semiconductors Product specification N-channel dual gate MOS-FETs BF904; BF904R Fig.12 Drain current as a function of gate 1 supply voltage (= VGG ); typical values; see Fig.20. VDS = 5 V; VG2-S =4V . R G1 = 120 kΩ (connected to VGG ); Tj=2 5°C. handbook, halfpage MLD275 234 ID (mA) V (V)GG Fig.13 Drain current as a function of gate 1 (= VGG ) and drain supply voltage; typical values; see Fig.20. VG2-S =4V . R G1 connected to VGG ; Tj=2 5°C. handbook, halfpage 24 8 MLD274 V = V (V)GG DS ID (mA) R = 47 kΩG1 68 kΩ 82 kΩ 100 kΩ 120 kΩ 150 kΩ 180 kΩ 220 kΩ VDS = 5 V; Tj=2 5°C. R G1 = 120 kΩ (connected to VGG ). Fig.14 Drain current as a function of gate 2 voltage; typical values; see Fig.20. handbook, halfpage 0246 MLD276 ID (mA) 4.5 V 4 V 3.5 V 3 V V (V)G2 S V = 5 VGG Fig.15 Gate 1 current as a function of gate 2 voltage; typical values; see Fig.20. VDS = 5 V; Tj=2 5°C. R G1 = 120 kΩ (connected to VGG ). handbook, halfpage 0246 MLB945 IG1 (µA) V (V)G2 S 4.5 V 4 V 3.5 V 3 V V = 5 VGG

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Philips Semiconductors Product specification N-channel dual gate MOS-FETs BF904; BF904R Fig.16 Input admittance as a function of frequency; typical values. VDS = 5 V; VG2 =4V . ID = 15 mA; Tamb =2 5°C. handbook, halfpage 103 MLD277 10210 10 1 10 2 yis (mS) f (MHz) bis gis Fig.17 Reverse transfer admittance and phase as a function of frequency; typical values. VDS = 5 V; VG2 =4V . ID = 15 mA; Tamb =2 5°C. 103 MLD278 10210 10 3 10 2 yrs 10 3 rs (µS) f (MHz) rs yrs (deg) ϕ ϕ Fig.18 Forward transfer admittance and phase as a function of frequency; typical values. VDS = 5 V; VG2 =4V . ID = 15 mA; Tamb =2 5°C. 103 MLD279 10210 10 2 yfs (mS) yfs f (MHz) fs fs (deg) ϕ ϕ Fig.19 Output admittance as a function of frequency; typical values. VDS = 5 V; VG2 =4V . ID = 15 mA; Tamb =2 5°C. handbook, halfpage 103 MLD280 10210 10 1 10 2 yos (mS) f (MHz) bos gos

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Philips Semiconductors Product specification N-channel dual gate MOS-FETs BF904; BF904R Fig.20 Cross-modulation test set-up. DUT VAGC 4.7 nF 10 kΩ MLD171 4.7 nF 450 nH C3 12 pF R L 50 Ω≈ VGG V DS R GEN V I 4.7 nF R G1Ω Ω

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Philips Semiconductors Product specification N-channel dual gate MOS-FETs BF904; BF904R Table 1 Scattering parameters: VDS =5 V; VG2-S = 4 V; ID =1 0m A Table 2 Noise data: VDS = 5 V; VG2-S = 4 V; ID =1 0m A f (MHz) S11 S21 S12 S22 MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) f (MHz) Fmin (dB) Γopt rn (ratio) (deg) 800 2.00 0.686 49.6 50.40

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Philips Semiconductors Product specification N-channel dual gate MOS-FETs BF904; BF904R PACKAGE OUTLINES UNIT A REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ mm 1.1 0.9 A 1 max 0.1 0.88 0.78 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 H E ywvQ 2.5 2.1 0.45 0.15 0.55 0.45 e 1.9 1.7 Lp 0.1 0.10.2 bp 0.48 0.38 DIMENSIONS (mm are the original dimensions) SOT143B 97-02-28 0 1 2 mm scale Plastic surface mounted package; 4 leads SOT143B D H E E AB v M A X A Lp Q detail X c y w M e B bp

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Philips Semiconductors Product specification N-channel dual gate MOS-FETs BF904; BF904R UNIT A REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ mm 1.1 0.9 A 1 max 0.1 0.88 0.78 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 H E ywvQ 2.5 2.1 0.55 0.25 0.45 0.25 e 1.9 1.7 Lp 0.1 0.10.2 bp 0.48 0.38 DIMENSIONS (mm are the original dimensions) SOT143R 97-03-10 0 1 2 mm scale Plastic surface mounted package; reverse pinning; 4 leads SOT143R D H E E AB v M A X A Lp Q detail X c y w M e B bp

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Philips Semiconductors Product specification N-channel dual gate MOS-FETs BF904; BF904R DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

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Philips Semiconductors Product specification N-channel dual gate MOS-FETs BF904; BF904R NOTES

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Philips Semiconductors Product specification N-channel dual gate MOS-FETs BF904; BF904R NOTES

© Philips Electronics N.V. SCA All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Internet: http://www.semiconductors.philips.com 1999 64 Philips Semiconductors – a worldwide company Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 58088 Newville 2114, Tel. +27 11 471 5401, Fax. +27 11 471 5398 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SÃO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 93 301 6312, Fax. +34 93 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381, Fax. +1 800 943 0087 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 62 5344, Fax.+381 11 63 5777 For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria:Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773 Belgium: see The Netherlands Brazil:see South America Bulgaria:Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 68 9211, Fax. +359 2 68 9102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381, Fax. +1 800 943 0087 China/Hong Kong: 501 Hong Kong Industrial Technology Centre,

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