BF620 ETC1
Document overview
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Technical content
PLANETA JSC , 2/13 Fedorovsky Ruchei, Veliky Novgorod, 173004, Russia Ph./Fax: +7–816–2231736 E-mail: planeta@novgorod.net © August 2001 Rev 1 http://www.novgorod.net/~planeta PLANETA The Small-signal NPN Silicon High Voltage Medium -Power Transistor
DESCRIPTION
The BF620 is an NPN silicon epitaxial transistor designed for application as a video output to drive color CRT, telephony, professional communication equipment and other high voltage applications. It has dynamic range and good current characteristic. This high voltage transistor in 3-Pin mini power plastic package SOT89 offers superior quality and performance at low cost.
FEATURES
Ø Low Saturation Voltages VCE(sat)= 0.6 V VBE(sat)= 0.9 V Ø High Breakdown Voltages V(BR)CBO = 300 V V(BR)CEO = 300 V Ø Low Collector Current IC = 50 mA Ø Complementary to BF621 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Rating Symbol Value Unit Collector – Emitter Voltage VCEO 300 V Collector – Base Voltage VCBO 300 V Emitter – Base Voltage VEBO 5 V Collector Current IC 50 mA Peak Collector Current ICM 100 mA Collector Dissipation PC 1.0 W Junction Temperature TJMAX 150 °C Operating Junction Temperature Range TOPR -60 to +100 °C Storage Temperature Range TSTG -65 to +150 °C
ORDERING INFORMATION
Device Marking Package Quantity Packing Style BF620 DC SOT -89 5 Kpcs / plastic bags In bulk BF620 -T1 DC SOT -89 1 Kpcs / Reel Embossed tape 12 -mm wide 7'' dia. Pin 2 (Collector) towards the windung. Perforation on the right. BF620 SOT89 JEDEC TO -243 EIAJ SC -62 GOST KT -47 Weight: 0.055g 1 – Base 2 – Collector 3 – Emitter
Ph./Fax: +7–816–2231736 PLANETA JSC , 2/13 Fedorovsky Ruchei, Veliky Novgorod, 173004, Russia E-ma il: planeta@novgorod.net http://www.novgorod.net/~planeta © August 2001 Rev 1 ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) Characteristic Symbol Min Typ Max Unit DC CHARACTERISTICS Collector – Base Cutoff Current, IE= 0mA, VCB =200V ICBO nA Emitter – Base Cutoff Current, IC = 0mA, VEB = 5V IEBO nA Collector – Base Breakdown Voltage, IC = 10µA, IE= 0mA V(BR)CBO 300 V Collector – Emitter Breakdown Voltage, IC = 1mA, IB= 0mA V(BR)CEO 300 V Emitter – Base Breakdown Voltage, IE=100µA, IC = 0mA V(BR)CEO V DC Current Gain, IC = 25mA, VCE = 20V hFE AC CHARACTERISTICS Collector – Emitter Saturation Voltage, IC = 30mA, IB= 5mA VCE(sat) 0.6 V Base – Emitter Saturation Voltage, IC = 20mA, IB= 2mA VBE(sat) 0.9 V Collector – Base Capacitance, IE= 0mA, VCB = 30V, f=1MHz C OB 1.6 pF Current Gain – Bandwidth Product, IC = 10mA, VCE = 10V fT MHz PACKAGE DIMENSIONS of BF620 in mm B4.5±0,1 1.9max 0.8m in 2.5±0.1 4±0.25 1.5 3.0 1.5±0.1 1 2 3 B PLASTIC CASE KT-47