BF543 VISHAY
Document overview
- Manufacturer or author: Provided By www.digicamel.com(free datasheet download site)
- PDF pages: 3
Technical content
Features
- Integrated gate protection diode Low feedback capacitance Low noise figure Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
Applications
High frequency stages up to 300 MHz. Mechanical Data Case: SOT-23 Plastic case Weight: approx. 8.0 mg Pinning: 1 = Source, 2 = Gate, 3 = Drain Parts Table Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Maximum Thermal Resistance 1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35µm Cu Part Marking Package BF543 LD SOT -23 Parameter Test condition Symbol Value Unit Drain - source voltage V DS 20 V Drain current I D 30 mA Gate - source peak current ±I GSM 10 mA Total power dissipation T amb ≤ 60 °C P tot 200 mW Channel temperature T Ch 150 °C Storage temperature range T stg -55 to +150 °C Parameter Test condition Symbol Value Unit Channel ambient 1) RthChA 450 K/W
www.vishay.com Document Number 85072 Rev. 1.5, 05-Jul-05 BF543 Vishay Semiconductors Electrical DC Characteristics Tamb = 25 °C, unless otherwise specified Electrical AC Characteristics Tamb = 25 °C, unless otherwise specified VDS = 10 V, ID = 4 mA, f = 1 MHz Package Dimensions in mm (Inches) Parameter Test condition Part Symbol Min Typ. Max Unit Drain - source breakdown voltage ID = 10 µA, -VGS = 4 V V (BR)DS 20 V Gate - source breakdown voltage ±IGS = 10 mA, VDS = 0 ±V (BR)GSS 7.5 12 V Gate - source leakage current ±V GS = 6 V, VDS = 0 ±I GSS 50 nA Drain current V DS = 10 V, VGS = 0 I DSS 1.5 8.0 mA BF543A I DSS 1.5 6.5 mA BF543B I DSS 4.0 8.0 mA Gate - source cut-off voltage V DS = 10 V, ID = 20 µA- V GS(OFF) 2.5 V Parameter Test condition Symbol Min Typ. Max Unit Forward transadmittance |y 21s|9 . 5 1 2 m S Gate 1 input capacitance C issg1 2.7 pF Feedback capacitance C rss 25 fF Output capacitance C oss 0.9 pF Noise figure G S = 2 mS, GL = 0.5 mS, f = 200 MHz F1 . 0 d B Power gain G S = 2 mS, GL = 0.5 mS, f = 200 MHz Gps 22 dB 2.0 (0.079) 0.9 (0.035) 0.52 (0.020) 17418 2.8 (.110) 3.1 (.122) 0.4 (.016) 0.1 (.004) max. 1.20(.047) 1.43 (.056) 0.098 (.005) 0.175 (.007) 0.95 (.037) 1.15 (.045) 2.35 (.092) 2.6 (.102) ISO Method E Mounting Pad Layout
Rev. 1.5, 05-Jul-05 Vishay Semiconductors www.vishay.com Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Cl ean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany