BF245A_V01 ETC
Document overview
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- PDF pages: 1
Technical content
designed • • • Performance Curves NH
- VHF/UHF Amplifiers See Sedion 4
- Oscillators BENEFITS
- Mixers • Wide Band High Yfs/Ciss Ratio
- Low Feedback Capacitance C rss = 0.85 pF Typical
- Selected I DSS and V GS Ranges ABSOLUTE MAXIMUM RATINGS (25°C) Continuous Device Dissipation
- INSULATED CASE
- INSENSITIVE TO LIGHT at (or Below) 25°C Free Air Temperature .~: Lead Temperature G DO G C S C ELECTRICAL CHARACTERISTICS (25°C) Bottom View Characteristic Min Typ Max Unit Test Conditions 1 BVGSS Gate-Source Breakdown Voltage -30 V IG = -1 /lA. VOS = 0 -2 IGSS Gate Reverse Current -5 nA VGS = -20V. VOS =0 --;:- iOSS Saturation Drain Current 2 25 rnA VOS = 15 V. VGS = 0 I-=-S !~ T BF245A 20 65 rnA
5 A lOSS
Selected Into Following BF245B 6.0 15 rnA VOS= 15V. VGS =0 1-T Groups INote 21 I~ I BF245C 12 25 rnA Corresponding to 8 VGS lOSS groups BF245B 16 -3.8 V VOS=15V.IO=20 0 /lA Ig BF245C -3.2 -75 V 10 VGSloff) Gate·Source Cutoff Voltage -{)5 -8 V VOS=15V.IO=IO/lA 11 gfs Smail-Signal Common-Source Forward 3 55 65 mmho VOS = 15 V. VGS = O. f = 1 kHz Transconductance 1-0 12 V C rss Common-Source Reverse 085 pF VOS= 20V. VGS = 1 V I-N Transfer Capacitance 13 A 1 25 k!l I f=100MHz 114 M - I nput Resistance VOS=20V.VGS=-IV I I-I g,s 10 kH f = 200 MHz 15 C C ISS Common·Source Input Capacitance 4 pF VOS = 20 V. VGS = --1 V ""16 Coss Common-Source Output Capacitance 16 pF VOS = 20 V. VGS = -1 V NOTE: I'JH 1. Derate linearly to 125°C free-air temperature at the rate of 2 5 mWrC 2. Pulse test PW " 300 /lS. duty cycle'" 3% 3-38 Siliconix