BDY29 ETC
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E SOLID STATE OTE 17860) | DI 35-15 _ -— Pt tect Hover transistors File Number 819 BDY29 . High-Power High-Current Transistor . Silicon N-P-N Devices for Applications TERMINAL DESIGNATIONS in Industrial and Commercial Equipment ¢ : crushes Features: f ° © High dissipation capability sc) © High Voey ratings ® = 15-A specification for heg and Vglsat) ; © Low saturation voltage with high beta noes JEDEC TO-204AA The RCA-BDY29 is a silicon n-p-n transistor intended for a wide variety of high-power high-current applications. Typi- cal applications for the BDY29 include power-switching cir~ cuits, audio amplifiers, series and shunt-regulators, driver and output stages, de-to-de converters, inverters, and sole- noid (hammer)/relay driver service. The device is supplied in the popular JEDEC TO-204AA package. COLLECTOR-TO-BASE VOLTAGE oo .eeeeeeeeseeeeeeeeeteeeeeetteeeeecseerenees MBO, 100 v COLLECTOR-TO-EMITTER VOLTAGE! With 1.8 V (Vge) & Rye = 100% oo cceeceecseeecsersseeteetsesereesseeeress VeEX 90 v CONTINUOUS COLLECTOR CURRENT s..s1s.ssssseuseseussesuennel ag 20 A - PEAK COLLECTOR CURRENT... eeeeereeeeeeeecrseeeseceeessteersessecsseerees TOM . 30 A TRANSISTOR DISSIPATION: Pr At case temperatures UP to 26°C vo. eeveeeeeeecessecceecteueeeueeeteeeeeeescenen 220 w TEMPERATURE RANGE: . PIN TEMPERATURE (During soldering . __ 865
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b Pro Electron Power Transistors = . BDY29 ° ELECTRICAL CHARACTERISTICS, At Case Temperature (T? = 25°C Unless Otherwise Specitied TEST CONDITIONS LIMITS . CHARACTERISTIC. SYMBOL vorese CURRENT] gpv29 [eave [Vee | caver [Var |e [5 [nin [| Collector Cutoff Currents ‘With emitter open mA Withbsseemitterjunetionreveretised | icex | [to [16 [7 [TT ma With base-emitter junction reverse-biased & To = 150°C 'cex mA inno a CA Collector-to-Emitter Sustaining Voltage: With base-emitter junction revorse-biased (Rge)= 100.2 Voexisus) v With external base-to-emitter resistance (Rye) = 1009 Voertsus) v Ware A Sme-to-Emittr Voltege [vec | # | es vy Calecorotiverswursionverwo [Veet | | || fre] - [ra |v Second-Breakdown Collector Current: With base forward-biased and 1-s, nonrepetitive pulse A Magnitude of Common-Emitter, Small-Signal, ‘Short-Circuit, Forward Current Transfer Ratio: 16 f= 0,05 MHz (Typ.) Common-Emitter, Small-Signal, Short-Circuit, Forward Current Transfer Ratio: f= kHz he Thermal Resistance: Junction-to-Case Rose °c Pulsed; pulse duration = 300 ps, rep. rate = 60 Hz; duty factor < 2%. Isp is defined as the current at which second breakdown occurs at a specified collector voltage with the emitter-base junction forward biased for transistor operation in the active region. 566
G E SOLID STATE oo OL de P387soa1 o037sb2 2 | . — Pro Electron Power Transistors ~ . ’ BDY29 oe oer ee a . ee oo eee 4g PEE ETM ANSON aT spo SSIS Ter RON reer 8 GRRE rERperinop SENAY 2.2 iE re EE Ey Pe E81 8 ea a DRS a Fd ea z See ee ge Guest ESTING TEA TTA reel tiiibet eT ialesist iE Ey Feu FEES SGD TNR EGER 227 E HIGH SEE PUBS ia A IT Pog aga ase eee ee See eee ere ech Hier iee ey alas a Ht 3, [:g.hroe,awoce uonnerenitve,putsel |AIM ett | Mees ree eee UR ure aiesl Hnrat Mieer Tear a a ves sel Oeste al PMD ESeaaeI TT fee SETS TT Ts UML ge Per TS FASTER EEIT |ivceo max. + 75 Vii TTT FEE =| P]eUs (ite E Ty Es oi Ed a Ee ed de | Fe Fn Bg BF eo ae eee TV Bee Eee S| ee ENO eras revere PR REE NE rr a i oT) ea a COLLECTOR-TO- EMITTER VOLTAGE (Voce) —V s2cs-24631 Fig. 1 — Maximum operating aoas. ee Fas ERR EEeaeataeere iat aeeteeni Tete fT TIS pg aceiiceatateactaqtueetaeiaen Heal Poorer rol EETETEEEEE EH ERE] ft eH . EEE SH ESSE ed | LI | Pie ‘CASE TEUPERATUAE (Te}—"C muveen, * COLLECTOR CURRENT Eg —a sictones Fig. 2 — Dissipation derating curve. Fig. 3 — Typical do beta characteristics. HH 7 ——_
GE SOLID STATE a ~ OL pe fjsa7soa1 ooseay 3876081 GE SOLID STATE. 016 17863 DC BRIE . Pro Electron powertanstors CE 17563 TBS IS ‘BDY29 ° : + HERR Cree SE el couteaveaen snort ee ate oatren wasnt nate Fig. 4 —- Typical saturation-voltage characteristics. Fig. 5 — Typical input characteristics. Fig. 6 Typica output characterises. Fig. 7 — Typical transfor characteristics 568 a