BDY27 ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BDY27
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min.)
- Collector-Emitter Saturation Voltage- : VCE(sat)= 0.6V(Max)@ IC = 2A
- High Switching Speed
APPLICATIONS
- Designed for LF signal powe amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 6 A IB B Base Current 3 A PC Collector Power Dissipation@TC=25℃ 87.5 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.0 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BDY27
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 200 V V(BR)CBO Collector-Base Breakdown Voltage IC= 3mA; IE= 0 400 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.25A B 0.6 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.25A B 1.2 V ICES Collector Cutoff Current VCE= 300V; VBE= 0 1.0 mA ICEO Collector Cutoff Current VCE= 200V; IB= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 10V; IC= 0 1.0 mA hFE DC Current Gain IC= 2A; VCE= 4V 15 100 fT Current Gain-Bandwidth Product IC= 0.5A; VCE= 15V; f=10MHz 10 MHz Switching Times ton Turn-On Time IC= 5A; IB= 1A B 0.5 μs toff Turn-Off Time IC= 5A; IB1= 1A; IB2= -0.5A 2.0 μs hFE Classifications A B C 15-45 30-90 75-100 isc Website：www.iscsemi.cn