BDY26C ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
INCHANGESemiconductor iscProductSpecification 1isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark iscSiliconNPNPowerTransistor BDY26C
DESCRIPTION
- Collector-EmitterBreakdown Voltage- :V(BR)CEO=180V(Min.)
- Collector-EmitterSaturation Voltage- :VCE(sat)=0.6V(Max)@IC =2A
- HighSwitching Speed
APPLICATIONS
- Designed forLF signal powe amplifierapplications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase 2.0 ℃/W SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage 300 V VCEO Collector-EmitterVoltage 180 V VEBO Emitter-BaseVoltage 10 V IC CollectorCurrent-Continuous 6 A IB BaseCurrent 3 A PC CollectorPowerDissipation@TC=25℃ 87.5 W TJ JunctionTemperature 200 ℃ Tstg StorageTemperature -65~200 ℃
INCHANGESemiconductor iscProductSpecification 2isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark iscSiliconNPNPowerTransistors BDY26C ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-EmitterBreakdownVoltage IC=50mA;IB=0 180 V V(BR)CBO Collector-BaseBreakdownVoltage IC=1mA;IE=0 300 V VCE(sat) Collector-EmitterSaturationVoltage IC=2A;IB=0.25A 0.6 V VBE(sat) Base-EmitterSaturationVoltage IC=2A;IB=0.25A 1.2 V ICES CollectorCutoffCurrent VCE=250V;VBE=0 1.0 mA ICEO CollectorCutoffCurrent VCE=180V;IB=0 1.0 mA IEBO EmitterCutoffCurrent VEB=10V;IC=0 1.0 mA hFE DCCurrentGain IC=2A;VCE=4V 75 180 fT CurrentGain-BandwidthProduct IC=0.5A;VCE=15V;f=10MHz 10 MHz SwitchingTimes ton Turn-OnTime IC=5A;IB=1A 1 μs toff Turn-OffTime IC=5A;IB1=1A;IB2=-0.5A 6 μs