BDY20 ISC
Document overview
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- PDF pages: 2
Technical content
isc website：www.iscsemi.cn isc Silicon NPN Power Transistor BDY20
DESCRIPTION
- Excellent Safe Operating Area
- DC Current Gain FE =20-70@I C = 4A
- Collector-Emitter Saturation Voltage- : V CE(sat )= 1.1V(Max)@ I C = 4A
APPLICATIONS
- Designed for general-purpose switching and amplifier
ABSOLUTE MAXIMUM RATINGS(T a =25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT R th j-c Thermal Resistance,Junction to Case 1.52 ℃/W SYMBOL PARAMETER VALUE UNIT V CBO Collector-Base Voltage 100 V V CEO Collector-Emitter Voltage 60 V V EBO Emitter-Base Voltage 7 V I C Collector Current-Continuous 15 A I B Base Current 7 A P C Collector Power Dissipation@T C =25℃ 115 W T J Junction Temperature 200 ℃ T stg Storage Temperature -65~200
isc website：www.iscsemi.cn isc Silicon NPN Power Transistor BDY20
ELECTRICAL CHARACTERISTICS
T C =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V CEO(SUS) Collector-Emitter Sustaining Voltage I C =200mA ; I B =0 60 V V CE (sat) Collector-Emitter Saturation Voltage I C = 4A; I B = 0.4A 1.1 V V CE (sat) Collector-Emitter Saturation Voltage I C = 10A; I B = 3.3A 3.0 V V BE( on Base-Emitter On Voltage I C = 4A; V CE = 4V 1.5 V I CEO Collector Cutoff Current V CE = 30V; I B =0 0.7 mA I CEX Collector Cutoff Current V CE = 100V; V BE(off) = 1.5V V CE = 100V; V BE(off) = 1.5V,T C =150℃ 1.0 5.0 mA I EBO Emitter Cutoff Current V EB = 7.0V; I C =0 5.0 mA h FE-1 DC Current Gain I C = 4A ; V CE = 4V 20 70 h FE-2 DC Current Gain I C = 10A ; V CE = 4V 5 I s/b Second Breakdown Collector Current with Base Forward Biased V CE = 40V,t= 1.0s,Nonrepetitive 2.87 A f T Current Gain-Bandwidth Product I C = 0.5A ; V CE = 10V 1 MHz