BDX33D ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
INCHANGESemiconductor iscProductSpecification isc website： www.iscsemi.com isc &iscsemi isregisteredtrademark1 iscSiliconNPNDarlingtonPowerTransistor BDX33D
DESCRIPTION
- Collector-EmitterSustaining Voltage- :VCEO(SUS)=120V(Min)
- HighDCCurrentGain :hFE=750(Min)@IC=3A
- LowCollectorSaturationVoltage :VCE(sat)=2.5V(Max.)@ IC=3A
- ComplementtoType BDX34D
APPLICATIONS
- Designedforgeneralpurpose amplifierandlowspeed switchingapplications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage 120 V VCEO Collector-EmitterVoltage 120 V VEBO Emitter-BaseVoltage 5 V IC CollectorCurrent-Continuous 10 A ICM CollectorCurrent-Peak 15 A IB BaseCurrent-Continuous 0.25 A PC CollectorPowerDissipation @TC=25℃ 70 W TJ JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -65~150 ℃ THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase 1.78 ℃/W
INCHANGESemiconductor iscProductSpecification isc website： www.iscsemi.com isc &iscsemi isregisteredtrademark2 iscSiliconNPNDarlingtonPowerTransistor BDX33D ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-EmitterSustainingVoltage IC=30mA;IB=0 120 V VCE(sat) Collector-EmitterSaturationVoltage IC=3A;IB=6mA 2.5 V VBE(on) Base-EmitterOnVoltage IC=3A;VCE=3V 2.5 V ICBO CollectorCutoffCurrent VCB=120V;IE=0 0.2 mA ICEO CollectorCutoffCurrent VCE=60V;IB=0 0.5 mA IEBO EmitterCutoffCurrent VEB=5V;IC=0 10 mA hFE DCCurrentGain IC=3A;VCE=3V 750