BDX14A ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
INCHANGESemiconductor iscProductSpecification isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 iscSiliconPNPPowerTransistor BDX14A
DESCRIPTION
- Continuous CollectorCurrent-IC=-4A
- Collector-EmitterSustaining Voltage- :VCEO(SUS)=-55V(Min.)
APPLICATIONS
- Designed forLF Large SignalPowerAmplification andMediumCurrent Switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase 6.0 ℃/W SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage -90 V VCER Collector-EmitterVoltageRBE=100Ω -60 V VCEO Collector-EmitterVoltage -55 V VEBO Emitter-BaseVoltage -7 V IC CollectorCurrent-Continuous -4 A IB BaseCurrent-Continuous -2 A PC CollectorPower Dissipation@TC=25℃ 29 W TJ JunctionTemperature 200 ℃ Tstg StorageTemperature -65~200 ℃
INCHANGESemiconductor iscProductSpecification isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 iscSiliconPNPPowerTransistor BDX14A ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-EmitterSustainingVoltage IC=-30mA;IB=0 -55 V VCER(SUS) Collector-EmitterSustainingVoltage IC=-100mA;RBE=100Ω -60 V V(BR)EBO Emitter-BaseBreakdownVoltage IE=-1mA;IC=0 -7 V VCE(sat) Collector-EmitterSaturationVoltage IC=-0.5A;IB=-50mA -1.0 V VBE(on) Base-EmitterOnVoltage IC=-0.5A;VCE=-4V -1.7 V ICEX CollectorCutoffCurrent VCE=-90V;VBE=1.5V VCE=-30V;VBE=1.5V,TC=150℃ -1.0 -5.0 mA hFE DCCurrentGain IC=-0.5A;VCE=-4V 25 250 fT CurrentGain-BandwidthProduct IC=-0.2A;VCE=-10V 4 MHz