BDX14 ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BDX14
DESCRIPTION
- Continuous Collector Current-IC= -4A
- Collector-Emitter Sustaining Voltage- : V CEO(SUS)= -55V(Min.)
APPLICATIONS
- Designed for general purpose switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -90 V VCER Collector-Emitter Voltage RBE= 100Ω -60 V VCEO Collector-Emitter Voltage -55 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -4 A IB B Base Current-Continuous -2 A PC Collector Power Dissipation@TC=25℃ 29 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 6.0 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BDX14
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -100mA; IB= 0 -55 V VCER(SUS) Collector-Emitter Sustaining Voltage IC= -100mA; RBE= 100Ω -60 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 -7 V VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA B -1.0 V VBE(on) Base-Emitter On Voltage IC= -0.5A; VCE= -4V -1.7 V ICEX Collector Cutoff Current VCE= -90V; VBE= 1.5V VCE= -30V; VBE= 1.5V,TC=150℃ -1.0 -5.0 mA hFE DC Current Gain IC= -0.5A; VCE= -4V 25 100 fT Current Gain-Bandwidth Product IC= -0.2A; VCE= -10V 4 MHz isc Website：www.iscsemi.cn 2