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BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS PRODUCT INFORMATION SEPTEMBER 1993 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters.
- Designed for Complementary Use with BDW94, BDW94A, BDW94B and BDW94 C
- 80 W at 25°C Case Temperature
- 12 A Continuous Collector Current
- Minimum hFE of 750 at 3 V, 5 A B C E TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.64 W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. RATIN G SYMBO L VALU E UNIT Collector-base voltage (IE = 0) BDW93 BDW93A BDW93B BDW93 C V CB O 100 V Collector-emitter voltage (I B = 0) BDW93 BDW93A BDW93B BDW93 C V CE O 100 V Emitter-base voltage V EB O 5 V Continuous collector current IC 12 A Continuous base current IB 0.3 A Continuous device dissipation at (or below) 25°C case temperature (see Note 1) Ptot 80 W Continuous device dissipation at (or below) 25°C free air temperature (see Note 2) Ptot 2 W Operating junction temperature range Tj -65 to +150 °C Storage temperature range Tstg -65 to +150 °C Operating free-air temperature range TA -65 to +150 °C
BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS SEPTEMBER 1993 - REVISED MARCH 199 7 PRODUCT INFORMATION NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETE R TEST CONDITION S MIN TY P MA X UNIT V (BR)CE O Collector-emitter breakdown voltage IC = 100 mA IB = 0 (see Note 3) BDW93 BDW93A BDW93B BDW93 C 100 V I CE O Collector-emitter cut-off current V C B = 40 V V C B = 60 V V C B = 80 V V C B = 80 V IB = 0 IB = 0 IB = 0 IB = 0 BDW93 BDW93A BDW93B BDW93 C m A I CB O Collector cut-off current V C B = 45 V V C B = 60 V V C B = 80 V V C B = 100 V V C B = 45 V V C B = 60 V V C B = 80 V V C B = 100 V IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 TC = 150°C TC = 150°C TC = 150°C TC = 150°C BDW93 BDW93A BDW93B BDW93C BDW93 BDW93A BDW93B BDW93 C 0.1 0.1 0.1 0.1 m A I EB O Emitter cut-off current V EB = 5 V IC = 0 2 m A hFE Forward current transfer ratio V C E = 3 V V C E = 3 V V C E = 3 V IC = 3 A IC = 10 A IC = 5 A (see Notes 3 and 4) 1000 100 750 20000 VCE(sat) Collector-emitter saturation voltage IB = 20 mA IB = 100 mA IC = 5 A IC = 10 A (see Notes 3 and 4) 2 3 V V BE(sat) Base-emitter saturation voltage IB = 20 mA IB = 100 mA IC = 5 A IC = 10 A (see Notes 3 and 4) 2.5 4 V VEC Parallel diode forward voltage IE = 5 A IE = 10 A IB = 0 IB = 0 4 V thermal characteristics PARAMETE R MIN TY P MA X UNIT R θJC Junction to case thermal resistance 1.56 °C/W R θJA Junction to free air thermal resistance 62.5 °C/W
BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS SEPTEMBER 1993 - REVISED MARCH 199 7 PRODUCT INFORMATION THERMAL INFORMATIO N Figure 4. MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE T C - Case Temperature - °C 0 25 50 75 100 125 150 P tot - Maximum Power Dissipation - W 100 TIS130AA
SEPTEMBER 1993 - REVISED MARCH 1997 BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS PRODUCT INFORMATION TO-220 3-pin plastic flange-mount packag e This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. MECHANICAL DAT A TO220 ALL LINEAR DIMENSIONS IN MILLIMETERS ø 1,23 1,32 4,20 4,70 1 2 3 0,97 0,61 see Note C see Note B 10,0 10,4 2,54 2,95 6,0 6,6 14,55 15,90 12,7 14,1 3,5 6,1 1,07 1,70 2,34 2,74 4,88 5,28 3,71 3,96 0,41 0,64 2,40 2,90 VERSION 2 VERSION 1 NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE
BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS SEPTEMBER 1993 - REVISED MARCH 199 7 PRODUCT INFORMATION IMPORTANT NOTIC E Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS . Copyright © 1997, Power Innovations Limited