BDW83 POINN

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BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS PRODUCT INFORMATION AUGUST 1978 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters.

  • Designed for Complementary Use with BDW84, BDW84A, BDW84B, BDW84C and BDW84 D
  • 150 W at 25°C Case Temperature
  • 15 A Continuous Collector Current
  • Minimum hFE of 750 at 3 V, 6 A SOT-93 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRAA B C E absolute maximum ratings at 25°C case temperature (unless otherwise noted) NOTES: 1. These values apply when the base-emitter diode is open circuited. 2. Derate linearly to 150°C case temperature at the rate of 1.2 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C. 4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, R BE = 100 Ω, VBE(off) = 0, R S = 0.1 Ω, VC C = 20 V. RATIN G SYMBO L VALU E UNIT Collector-base voltage (IE = 0) BDW83 BDW83A BDW83B BDW83C BDW83 D V CB O 100 120 V Collector-emitter voltage (I B = 0) (see Note 1) BDW83 BDW83A BDW83B BDW83C BDW83 D V CE O 100 120 V Emitter-base voltage V EB O 5 V Continuous collector current IC 15 A Continuous base current IB 0.5 A Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 150 W Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 3.5 W Unclamped inductive load energy (see Note 4) ½L IC 2 100 m J Operating junction temperature range Tj -65 to +150 °C Operating temperature range Tstg -65 to +150 °C Operating free-air temperature range TA -65 to +150 °C

BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS AUGUST 1978 - REVISED MARCH 199 7 PRODUCT INFORMATION NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. † Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETE R TEST CONDITION S MIN TY P MA X UNIT V (BR)CE O Collector-emitter breakdown voltage IC = 30 mA IB = 0 (see Note 5) BDW83 BDW83A BDW83B BDW83C BDW83 D 100 120 V I CE O Collector-emitter cut-off current V C E = 30 V V C E = 30 V V C E = 40 V V C E = 50 V V C E = 60 V IB = 0 IB = 0 IB = 0 IB = 0 IB = 0 BDW83 BDW83A BDW83B BDW83C BDW83 D m A I CB O Collector cut-off current V C B = 45 V V C B = 60 V V C B = 80 V V C B = 100 V V C B = 120 V V C B = 45 V V C B = 60 V V C B = 80 V V C B = 100 V V C B = 120 V IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 TC = 150°C TC = 150°C TC = 150°C TC = 150°C TC = 150°C BDW83 BDW83A BDW83B BDW83C BDW83D BDW83 BDW83A BDW83B BDW83C BDW83 D 0.5 0.5 0.5 0.5 0.5 m A I EB O Emitter cut-off current V EB = 5 V IC = 0 2 m A hFE Forward current transfer ratio V C E = 3 V V C E = 3 V IC = 6 A IC = 15 A (see Notes 5 and 6) 750 100 20000 VBE(on) Base-emitter voltage V C E = 3 V IC = 6 A (see Notes 5 and 6) 2.5 V VCE(sat) Collector-emitter saturation voltage IB = 12 mA IB = 150 mA IC = 6 A IC = 15 A (see Notes 5 and 6) 2.5 4 V VEC Parallel diode forward voltage IE = 15 A IB = 0 3.5 V thermal characteristics PARAMETE R MIN TY P MA X UNIT R θJC Junction to case thermal resistance 0.83 °C/W R θJA Junction to free air thermal resistance 35.7 °C/W resistive-load-switching characteristics at 25°C case temperature PARAMETE R TEST CONDITIONS † MIN TY P MA X UNIT ton Turn-on time IC = 10 A V BE(off) = -4.2 V IB(on) = 40 mA R L = 3 Ω IB(off) = -40 mA tp = 20 µs, dc ≤ 2% 0.9 µs toff Turn-off time 7 µs

BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS AUGUST 1978 - REVISED MARCH 199 7 PRODUCT INFORMATION MAXIMUM SAFE OPERATING REGION S Figure 4. THERMAL INFORMATIO N Figure 5. MAXIMUM FORWARD-BIAS SAFE OPERATING AREA V CE - Collector-Emitter Voltage - V 1·0 10 100 1000 IC - Collector Current - A 0·1 1·0

100 SAS140AB

T C - Case Temperature - °C 0 25 50 75 100 125 150 P tot - Maximum Power Dissipation - W 100 120 140 160 TIS140AB

BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS AUGUST 1978 - REVISED MARCH 199 7 PRODUCT INFORMATION SOT-93 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. MECHANICAL DAT A SOT-93 ALL LINEAR DIMENSIONS IN MILLIMETERS 4,90 4,70 1,37 1,17 0,78 0,50 2,50 TYP. 15,2 14,7 12,2 MAX. 16,2 MAX. 18,0 TYP. 31,0 TYP. 1,30 1,10 11,1 10,8 4,1 4,0 3,95 4,15 1 2 3 NOTE A: The centre pin is in electrical contact with the mounting tab. MDXXAW ø

BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS AUGUST 1978 - REVISED MARCH 199 7 PRODUCT INFORMATION IMPORTANT NOTIC E Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS . Copyright © 1997, Power Innovations Limited