BDW36 ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
isc website：www.iscsemi.cn isc Silicon NPN Power Transistors BDW36
DESCRIPTION
- Collector-Emitter Sustaining Voltage- : V CEO(SUS) = 180V(Min)
- High Switching Speed
- Low Collector Saturation Voltage- : V CE( sat )= 1.0V(Max)@ I C = 10A
APPLICATIONS
- Designed for use in industrial-military power amplifier and switching circuit applications. ABSOLUTE MAXIMUM RATINGS(T a =25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT R th j-c Thermal Resistance,Junction to Case 0.875 ℃/W SYMBOL PARAMETER VALUE UNIT V CBO Collector-Base Voltage 180 V V CEO Collector-Emitter Voltage 180 V V EBO Emitter-Base Voltage 7 V I C Collector Current-Continuous 30 A I CM Collector Current-Peak 50 A I B Base Current-Continuous 10 A P C Collector Power Dissipation @T C =25℃ 250 W T J Junction Temperature 200 ℃ T stg Storage Temperature -65~200
isc website：www.iscsemi.cn isc Silicon NPN Power Transistors BDW36
ELECTRICAL CHARACTERISTICS
T C =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V CEO(SUS) Collector-Emitter Sustaining Voltage I C = 50mA; I B = 0 150 V V CE (sat) Collector-Emitter Saturation Voltage I C = 10A; I B = 1A 1.0 V V CE (sat) Collector-Emitter Saturation Voltage I C = 30A; I B = 6A 3.0 V V BE (sat) Base-Emitter Saturation Voltage I C = 10A; I B = 1A 1.8 V V BE( on Base-Emitter On Voltage I C = 10A; V CE = 4V 1.8 V I CEO Collector Cutoff Current V CE = 90V; I B = 0 50 μA I CBO Collector Cutoff Current V CB =180V; I E = 0 10 μA I EBO Emitter Cutoff Current V EB = 6V; I C = 0 0.1 mA h FE-1 DC Current Gain I C = 8A; V CE = 4V 20 100 h FE-2 DC Current Gain I C = 30A; V CE = 4V 5 f T Current-Gain—Bandwidth Product I C = 1A ; V CE = 10V 1 MHz