BDW23 ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDW23/A/B/C
DESCRIPTION
- Collector Current -IC= 6A
- High DC Current Gain-hFE= 750(Min)@ IC= 2A
- Complement to Type BDW24/A/B/C
APPLICATIONS
- Designed for hammer drivers, audio amplifiers applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDW23 45 BDW23A 60 BDW23B 80 VCER Collector-Emitter Voltage BDW23C 100 V BDW23 45 BDW23A 60 BDW23B 80 VCEO Collector-Emitter Voltage BDW23C 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 8 A IB B Base Current-Continuous 0.2 A PC Collector Power Dissipation @ TC=25℃ 50 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDW23/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDW23 45 BDW23A 60 BDW23B 80 V(BR)CEO Collector-Emitter Breakdown Voltage BDW23C IC= 100mA ;IB=0 100 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB= 8mA B 2 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6A; IB= 60mA B 3 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 8mA B 2.5 V VBE(on)-1 Base-Emitter On Voltage IC= 1A ; VCE= 3V 2.5 V VBE(on)-2 Base-Emitter On Voltage IC= 6A ; VCE= 3V 3 V VECF C-E Diode Forward Voltage IF= 2A 1.8 V BDW23 VCE= 22V; IB= 0 B BDW23A VCE= 30V; IB= 0 B BDW23B VCE= 40V; IB= 0 B ICEO Collector Cutoff Current BDW23C VCE= 50V; IB= 0 B 0.5 mA BDW23 VCB= 45V;IE= 0 BDW23A VCB= 60V;IE= 0 BDW23B VCB= 80V;IE= 0 ICBO Collector Cutoff Current BDW23C VCB= 100V;IE= 0 0.2 mA IEBO Emitter Cutoff Current VEB= 5V; IC=0 2 mA hFE-1 DC Current Gain IC= 1A ; VCE= 3V 1000 hFE-2 DC Current Gain IC= 2A ; VCE= 3V 750 20000 hFE-3 DC Current Gain IC= 6A ; VCE= 3V 100 isc Website：www.iscsemi.cn 2