BDV66 ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDV66/A/B/C
DESCRIPTION
- Collector Current -IC= -16A
- Collector-Emitter Saturation Voltage- : V CE(sat)= -2.0V(Max.)@ IC= -10A
- Complement to Type BDV67/A/B/C
APPLICATIONS
- Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDV66 -80 BDV66A -100 BDV66B -120 VCBO Collector-Base Voltage BDV66C -140 V BDV66 -60 BDV66A -80 BDV66B -100 VCEO Collector-Emitter Voltage BDV66C -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -16 A ICM Collector Current-Peak -20 A IB B Base Current-Continuous -0.5 A PC Collector Power Dissipation @ TC=25℃ 175 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.625 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDV66/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDV66 -60 BDV66A -80 BDV66B -100 VCEO(SUS) Collector-Emitter Sustaining Voltage BDV66C IC= -100mA ;IB=0 -120 V VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -40mA -2 V VBE(on) Base-Emitter On Voltage IC= -10A ; VCE= -3V -2.5 V ICEO Collector Cutoff Current VCE= 1/2VCEOmax; IB= 0 -1 mA BDV66 VCB= -40V;IE= 0;TJ= 150℃ BDV66A VCB= -50V;IE= 0;TJ= 150℃ BDV66B VCB= -60V;IE= 0;TJ= 150℃ ICBO Collector Cutoff Current BDV66C VCB= -70V;IE= 0;TJ= 150℃ -5 mA ICBO Collector Cutoff Current VCB= VCBOmax;IE= 0 -1 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -5 mA hFE DC Current Gain IC= -10A ; VCE= -3V 1000 COB Output Capacitance IE= 0 ; VCB= -10V; ftest= 1MHz 300 pF Switching times ton Turn-on Time 1 μs toff Turn-off Time IC= -10A; IB1= -IB2= -40mA; VCC= 12V 3.5 μs isc Website：www.iscsemi.cn 2