BDV64 TRSYS

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TRANSYS BDV64, BDV64A, BDV64B, BDV64C ELECTRONICS PNP SILICON POWER DARLINGTONS LiMiTED SOT-93 PACKAGE (TOP VIEW) @ Designed for Complementary Use with | BDV65, BDV65A, BDV65B and BDV65C Bo @ 125 W at 25°C Case Temperature co @ 12 AContinuous Collector Current @ Minimum hee of 1000 at 4 V,5 A ——— FE E Aa Pin 2 is in electrical contact with the mounting base. absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT BDV64 ~60 BDV64A -80 lector- = Collector-base voltage (I = 0) BDV64B Veso -100 Vv BDV64C -120 BDV64 ~60 i _ BDV64A -80 Collector-emitter voltage (Ig = 0) epveas Voeo “400 v BDV64C -120 Enitarbase volage Continuous collector current Peak collector current (see Note 7) Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Operating junction temperature range 6510 +150 ‘Storage temperature range -65 to +150 [ead temperature 3.2 mm from case for 10 seconds NOTES: 1. This value applies for t, < 0.1 ms, duty cycle < 10% 2. Derate linearly to 150°C case temperature at the rate of 0.56 W/C. 3. Derate linearly to 150°C. free air temperature at the rate of 28 mW/'C.

BDV64, BDV64A, BDV64B, BDV64C electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS | min | TYP | MAX] UNIT BDVE4 ~60 Collector-emitter BDVE4A -80 Vv Io= -30mMA — Ig=0 (see Note 4) v (8R)CEO breakdown voltage c m 8 ( ) BDV64B -100 BDVE4C -120 Vop= -30V Ig=0 BDVE4 2 \\ Collector-emitter Vop= -40V Ig=0 BDVE4A 2] on CEO cut-off current Vop= -50V Ip=0 BDV64B 2 Vop= -60V_ = Ig=0 BDV64C 2 Vop= -60V lp =0 BDV64 -0.4 Vop= -80V Ie=0 BDV64A -0.4 Vop=-100V Ie =0 BDV64B -0.4 | Collector cut-off Vop=-120V Ie =0 BDV64C 04) oy CBO current Vep= -30V Ip=0 To = 150°C BDV64 2 Vep= -40V le=0 To= 150°C BDV64A 2 Vop= SOV Ie=0 To = 150°C BDV64B 2 Vop= -60V Ie=0 To = 150°C BDVe4C 2 Emitter cut-off \\ Vep= -5V Ic =0 5 A Forward current oe = 'c =A (see Notes 4 and) [mol | | Collector-emitter Base-emitter Vv Voce= -4V IG=-5A Notes 4 and 5) -2.5 Vv Parallel diod Veo parallsiclode le= 410A Ig=0 (see Notes 4 and 5) 35 | Vv forward voltage NOTES: 4. These parameters must be measured using pulse techniques, t, = 300 us, duty cycle < 2%. 5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics | Fasc Junotontecasethermalrestanos—— SSS [Rag dunctont ee airhermal resend’ SSSS~ SY

Figure 1. Figure 2.

80 To= -40°C

BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS THERMAL INFORMATION MAXIMUM POWER DISSIPATION CASE TEMPERATURE wT TTT aN Nm Pa ft TNT SNS EN t) 25 50 75 100 125150 T,, - Case Temperature - °C Figure 4.

BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS MECHANICAL DATA SOT-93 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. SOT-93 4,90 4,70 15,2 1,37 44 as a *30 14,7 3,95 117 T 1 415 OO | 16,2 MAX. 12,2 MAX. 4 DO q Cc i 31,0 TYP. | | 18,0 TYP. | 1,30 iS LL 0,78 1,10 0,50 11,1 toe 2,50 TYP. ALL LINEAR DIMENSIONS IN MILLIMETERS NOTE A: The centre pin is in electrical contact with the mounting tab.