BDV64 ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDV64/A/B/C
DESCRIPTION
- Collector Current -IC= -12A
- Collector-Emitter Saturation Voltage- : V CE(sat)= -2.0V(Max.)@ IC= -5A
- Complement to Type BDV65/A/B/C
APPLICATIONS
- Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDV64 -60 BDV64A -80 BDV64B -100 VCBO Collector-Base Voltage BDV64C -120 V BDV64 -60 BDV64A -80 BDV64B -100 VCEO Collector-Emitter Voltage BDV64C -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A ICM Collector Current-Peak -15 A IB B Base Current-Continuous -0.5 A Collector Power Dissipation @ TC=25℃ 125 PC Collector Power Dissipation @ Ta=25℃ 3.5 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 35.7 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDV64/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDV64 -60 BDV64A -80 BDV64B -100 V(BR)CEO Collector-Emitter Breakdown Voltage BDV64C IC= -30mA; IB= 0 -120 V VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -20mA B -2.0 V VBE(on) Base-Emitter On Voltage IC= -5A; VCE= -4V -2.5 V ICEO Collector Cutoff Current VCE= 1/2VCEOmax; IB= 0 -2.0 mA BDV64 VCB= -40V; IE= 0;TJ= 150℃ BDV64A VCB= -50V; IE= 0;TJ= 150℃ BDV64B VCB= -60V; IE= 0;TJ= 150℃ ICBO Collector Cutoff Current BDV64C VCB= -70V; IE= 0;TJ= 150℃ -2.0 mA ICBO Collector Cutoff Current VCB= VCBOmax; IE= 0 -0.4 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -5 mA hFE DC Current Gain IC= -5A; VCE= -4V 1000 isc Website：www.iscsemi.cn 2