BDT61 ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistors BDT61/A/B/C
DESCRIPTION
- DC Current Gain -hFE = 750(Min)@ IC= 1.5A
- Collector-Emitter Sustaining Voltage- : V CEO(SUS) = 60V(Min)- BDT61; 80V(Min)- BDT61A; 100V(Min)- BDT61B; 120V(Min)- BDT61C
- Complement to Type BDT60/A/B/C
APPLICATIONS
- Designed for use in audio amplifier output stages , general purpose amplifier and high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDT61 60 BDT61A 80 BDT61B 100 VCBO Collector-Base Voltage BDT61C 120 V BDT61 60 BDT61A 80 BDT61B 100 VCEO Collector-Emitter Voltage BDT61C 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IB B Base Current 0.1 A Collector Power Dissipation Ta=25℃ 2 PC Collector Power Dissipation T C=25℃ 50 W Tj Junction Temperature 150 ℃ Tstg Storage Ttemperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.5 ℃/W Rth j-c Thermal Resistance,Junction to Ambient 62.5 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistors BDT61/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDT61 60 BDT61A 80 BDT61B 100 V(BR)CEO Collector-Emitter Breakdown Voltage BDT61C IC= 30mA; IB= 0 120 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 6mA 2.5 V VBE(on) Base-Emitter On Voltage IC= 1.5A ; VCE= 3V 2.5 V BDT61 VCB= 60V; IE= 0 VCB= 30V; IE= 0; TJ=150℃ 0.2 2.0 BDT61A VCB= 80V; IE= 0 VCB= 40V; IE= 0; TJ=150℃ 0.2 2.0 BDT61B VCB= 100V; IE= 0 VCB= 50V; IE= 0; TJ=150℃ 0.2 2.0 ICBO Collector Cutoff Current BDT61C VCB= 120V; IE= 0 VCB= 60V; IE= 0; TJ=150℃ 0.2 2.0 mA BDT61 VCE= 30V; IB= 0 B 0.5 BDT61A VCE= 40V; IB= 0 B 0.5 BDT61B VCE= 50V; IB= 0 B 0.5 ICEO Collector Cutoff Current BDT61C VCE= 60V; IB= 0 B 0.5 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 5 mA hFE DC Current Gain IC= 1.5A; VCE= 3V 750 VECF C-E Diode Forward Voltage IE= 1.5A 2.0 V Switching Times ton Turn-On Time 1.0 μs toff Turn-Off Time IC= 2A; IB1= -IB2= 8mA; VBE(off)= -5V; RL= 20Ω 4.5 μs isc Website：www.iscsemi.cn