BDT60F ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistors BDT60F/AF/BF/CF
DESCRIPTION
- DC Current Gain -hFE = 750(Min)@ IC= -1.5A
- Collector-Emitter Sustaining Voltage- : V CEO(SUS) = -60V(Min)- BDT60F; -80V(Min)- BDT60AF -100V(Min)- BDT60BF; -120V(Min)- BDT60CF
- Complement to Type BDT61F/61AF/61BF/61CF
APPLICATIONS
- Designed for use in audio amplifier output stages , general purpose amplifier and high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDT60F -60 BDT60AF -80 BDT60BF -100 VCBO Collector-Base Voltage BDT60CF -120 V BDT60F -60 BDT60AF -80 BDT60BF -100 VCEO Collector-Emitter Voltage BDT60CF -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Pulse -6 A IB B Base Current -0.1 A PC Collector Power Dissipation TC=25℃ 25 W Tj Junction Temperature 150 ℃ Tstg Storage Ttemperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 5 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistors BDT60F/AF/BF/CF
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDT60F -60 BDT60AF -80 BDT60BF -100 VCEO(SUS) Collector-Emitter Sustaining Voltage BDT60CF IC= -30mA; IB= 0 -120 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1.5A; IB= -6mA B -2.5 V VBE(on) Base-Emitter On Voltage IC= -1.5A ; VCE= -3V -2.5 V ICBO Collector Cutoff Current VCB= -30V; IE= 0 VCB= 1/2VCBO; IE= 0; TJ=150℃ -0.2 -1 mA ICEO Collector Cutoff Current VCE= 1/2VCEO; IB= 0 -0.2 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -5 mA hFE-1 DC Current Gain IC= -0.5A ; VCE= -3V 2000 hFE-2 DC Current Gain IC= -1.5A ; VCE= -3V 750 hFE-3 DC Current Gain IC= -4A ; VCE= -3V 250 VECF-1 C-E Diode Forward Voltage IF= 1.5A 2 V VECF-2 C-E Diode Forward Voltage IF= 4A 2.1 V Switching Times ton Turn-On Time 0.3 1.5 μs toff Turn-Off Time IC= -1.5A; IB1= -IB2= -6mA 1.5 5.0 μs isc Website：www.iscsemi.cn