BDT60 ISC
Document overview
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- PDF pages: 2
Technical content
isc website：www.iscsemi.cn isc Silicon PNP Darlington Power Transistors BDT60/A/B/C
DESCRIPTION
- DC Current Gain -h FE = 750(Min)@ I C = - 1.5A
- Collector-Emitter Sustaining Voltage- : V CEO(SUS) = -60V(Min)- BDT60; -80V(Min)- BDT60A; -100V(Min)- BDT60B; -120V(Min)- BDT60C
- Complement to Type BDT61/A/B/C
APPLICATIONS
- Designed for use in audio amplifier output stages , general purpose amplifier and high speed switching applications ABSOLUTE MAXIMUM RATINGS(T a =25 SYMBOL PARAMETER VALUE UNIT V CBO Collector-Base Voltage BDT60 -60 V BDT60A -80 BDT60B -100 BDT60C -120 V CEO Collector-Emitter Voltage BDT60 -60 V BDT60A -80 BDT60B -100 BDT60C -120 V EBO Emitter-Base Voltage -5 V I C Collector Current-Continuous -4 A I B Base Current -0.1 A P C Collector Power Dissipation T a =25℃ 2 W Collector Power Dissipation T C =25℃ 50 T j Junction Temperature 150 ℃ T stg Storage Ttemperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT R th j-c Thermal Resistance,Junction to Case 2.5 ℃/W R th j-c Thermal Resistance,Junction to Ambient 62.5 ℃/W
isc website：www.iscsemi.cn isc Silicon PNP Darlington Power Transistors BDT60/A/B/C
ELECTRICAL CHARACTERISTICS
T C =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP . MAX UNIT V (BR)CEO Collector-Emitter Breakdown Voltage BDT60 I C = -30mA; I B = 0 -60 V BDT60A -80 BDT60B -100 BDT60C -120 V CE (sat) Collector-Emitter Saturation Voltage I C = -1.5A; I B = -6mA -2.5 V V BE (on) Base-Emitter On Voltage I C = -1.5A ; V CE = -3V -2.5 V I CBO Collector Cutoff Current BDT60 V CB = -60V; I E = 0 V CB = -30V; I E = 0; T J =150℃ -0.2 -2.0 mA BDT60A V CB = -80V; I E = 0 V CB = -40V; I E = 0; T J =150℃ -0.2 -2.0 BDT60B V CB = -100V; I E = 0 V CB = -50V; I E = 0; T J =150℃ -0.2 -2.0 BDT60C V CB = -120V; I E = 0 V CB = -60V; I E = 0; T J =150℃ -0.2 -2.0 I CEO Collector Cutoff Current BDT60 V CE = -30V; I B = 0 -0.5 mA BDT60A V CE = -40V; I B = 0 -0.5 BDT60B V CE = -50V; I B = 0 -0.5 BDT60C V CE = -60V; I B = 0 -0.5 I EBO Emitter Cutoff Current V EB = -5V; I C = 0 -5 mA h FE DC Current Gain I C = -1.5A; V CE = -3V 750 V ECF C-E Diode Forward Voltage I E = -1.5A -2.0 V Switching Times t on Turn-On Time I C = -2A; I = -I = -8mA; V BE(off) = 5V; R L = 20Ω 1.0 μs t off Turn-Off Time 4.5 μs