BDT60 TRSYS
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TRANGYS BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS LiMiTED TO-220 PACKAGE A : P @ Designed for Complementary Use with (TOP VIEW) BDT61, BDT61A, BDT61B and BDT61C. Bo @ 50 Wat 25°C Case Temperature c 2 ————FJ @ 4AContinuous Collector Current Eo} 3 @ Minimum hg of 750 at 1.5 V,3 A $$ Pin 2 is in electrical contact with the mounting base. absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT BDT60 ~60 BDT60A -80 lector- = Collector-base voltage (I_ = 0) BDT60B Voso -100 Vv BDT60C -120 BDT60 ~60 i _ BDT60A -80 Collector-emitter voltage (Ig = 0) BDTEOB Voeo “400 v BDT60C -120 Enitarbase volage Continuous collector current Continuous device dissipation at (or below) 25°C case temperature (see Note 1) Continuous device dissipation at (or below) 25°C free air temperature (see Note 2) Operating junction temperature range 6510 +150 ‘Storage temperature range -65 to +150 Operating free-air temperature range “6510 +150 NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.4 W/'C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/C.
BDT60, BDT60A, BDT60B, BDT60C. PNP SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS | min | TYP | MAX] UNIT BDTEO ~60 Collector-emitter BDT60A -80 Vv Io= -30mMA — Ig=0 (see Note 3) v (BR)CEO breakdown voltage c m 8 ( ) BDT60B -100 BDT60C -120 Voe= -30V Ig=0 BDTEO “05 \\ Collector-emitter Voe= -40V Ig=0 BDT60A 05| 1, CEO cut-off current Voe= -50V Ip=0 BDT60B -0.5 Vce= -60V = Ig=0 BDT60C -0.5 Vep= -60V. [e=0 BDT60 -0.2 Vop= -80V Ie=0 BDT60A -0.2 Vop=-100V Ie =0 BDT60B -0.2 \\ Collector cut-off Vop =-120 V le=0 BDT60C -0.2 mA CBO current Vep= -30V Ip=0 To = 150°C BDT60 -2.0 Vop= -40V Ie =0 To = 150°C BDT60A -2.0 Vop= SOV Ie=0 To = 150°C BDT60B -2.0 Vop= -60V = Ie=0 To = 150°C BDT60C -2.0 Emitter cut-off I Vep= -5V Io=0 5 A Forward current oe = 8 'c = 188 (see Notes 9 and) fo] | | Collector-emitter Base-emitter Parallel diode Vv le= -15A Ig=0 -2.0 Vv NOTES: 3. These parameters must be measured using pulse techniques, t, = 300 us, duty cycle < 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics | RucJunctontocasethemalressiance——SSSSSCSCSC~SSSC*i | [Fun Junction otreearthemalrestanes—SSSSCSCSCSC~CSS*dYSCC* as | resistive-load-switching characteristics at 25°C case temperature PARAMETER TEST CONDITIONS Tf | min | typ | max] UNIT ie=2A ae a a Cr tor _Turn-off time Vee(ot) =5V RL =200 tp=20us,desa% [| 45] | 1 | T Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
8 Fo SG Y/
5 Ee Fa a
Figure 1. Figure 2.
BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS MECHANICAL DATA SOT-93 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. SOT-93 4,90 4,70 15,2 1,37 44 as a *30 14,7 3,95 117 T 1 415 OO | 16,2 MAX. 12,2 MAX. 4 DO q Cc i 31,0 TYP. | | 18,0 TYP. | 1,30 iS LL 0,78 1,10 0,50 11,1 toe 2,50 TYP. ALL LINEAR DIMENSIONS IN MILLIMETERS NOTE A: The centre pin is in electrical contact with the mounting tab.