BDT42 ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BDT42/A/B/C
DESCRIPTION
- DC Current Gain -hFE = 30(Min)@ IC= -0.3A
- Collector-Emitter Sustaining Voltage- : V CEO(SUS) = -40V(Min)- BDT42; -60V(Min)- BDT42A -80V(Min)- BDT42B; -100V(Min)- BDT42C
- Complement to Type BDT41/A/B/C
APPLICATIONS
- Designed for use in general purpose amplifer and switching
ABSOLUTE MAXIMUM RATINGS(T =25℃a ) SYMBOL PARAMETER VALUE UNIT BDT42 -80 BDT42A -100 BDT42B -120 VCBO Collector-Base Voltage BDT42C -140 V BDT42 -40 BDT42A -60 BDT42B -80 VCEO Collector-Emitter Voltage BDT42C -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6 A ICM Collector Current-Peak -10 A IB B Base Current -3 A PC Collector Power Dissipation TC=25℃ 65 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.92 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 70 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BDT42/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDT42 -40 BDT42A -60 BDT42B -80 VCEO(SUS) Collector-Emitter Sustaining Voltage BDT42C IC= -30mA; IB= 0 -100 V VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -0.6A B -1.5 V VBE(on) Base-Emitter On Voltage IC= -6A ; VCE= -4V -2.0 V ICES Collector Cutoff Current VCE= VCEOmax; VBE= 0 -0.4 mA BDT42/A VCE= -30V; IB= 0 B ICEO Collector Cutoff Current BDT42B/C VCE= -60V; IB= 0 B -0.2 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -0.5 mA hFE-1 DC Current Gain IC= -0.3A ; VCE= -4V 30 hFE-2 DC Current Gain IC= -3A ; VCE= -4V 15 75 fT Current-Gain—Bandwidth Product IC= -0.5A ; VCE= -10V 3 MHz Switching Times ton Turn-On Time 0.4 μs toff Turn-Off Time IC= -6A; IB1= -IB2= -0.6A 0.7 μs isc Website：www.iscsemi.cn