BDT42F ISC

Document overview

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Technical content

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BDT42F/AF/BF/CF

DESCRIPTION

  • DC Current Gain -hFE = 30(Min)@ IC= -0.3A
  • Collector-Emitter Sustaining Voltage- : V CEO(SUS) = -40V(Min)- BDT42F; -60V(Min)- BDT42AF -80V(Min)- BDT42BF; -100V(Min)- BDT42CF
  • Complement to Type BDT41F/AF/BF/CF

APPLICATIONS

  • Designed for use in general purpose amplifer and switching

ABSOLUTE MAXIMUM RATINGS(T =25℃a ) SYMBOL PARAMETER VALUE UNIT BDT42F -80 BDT42AF -100 BDT42BF -120 VCBO Collector-Base Voltage BDT42CF -140 V BDT42F -40 BDT42AF -60 BDT42BF -80 VCEO Collector-Emitter Voltage BDT42CF -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6 A ICM Collector Current-Peak -10 A IB B Base Current -3 A PC Collector Power Dissipation TC=25℃ 32 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 6.3 ℃/W isc Website：www.iscsemi.cn

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BDT42F/AF/BF/CF

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDT42F -40 BDT42AF -60 BDT42BF -80 VCEO(SUS) Collector-Emitter Sustaining Voltage BDT42CF IC= -30mA; IB= 0 -100 V VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -0.6A B -1.5 V VBE(on) Base-Emitter On Voltage IC= -6A ; VCE= -4V -2.0 V ICES Collector Cutoff Current VCE= VCEOmax; VBE= 0 -0.4 mA BDT42F/AF VCE= -30V; IB= 0 B ICEO Collector Cutoff Current BDT42BF/CF VCE= -60V; IB= 0 B -0.2 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -0.5 mA hFE-1 DC Current Gain IC= -0.3A ; VCE= -4V 30 hFE-2 DC Current Gain IC= -3A ; VCE= -4V 15 75 fT Current-Gain—Bandwidth Product IC= -0.5A ; VCE= -10V 3 MHz Switching Times ton Turn-On Time 0.6 μs toff Turn-Off Time IC= -6A; IB1= -IB2= -0.6A 1.0 μs isc Website：www.iscsemi.cn