BDT41F ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BDT41F/AF/BF/CF
DESCRIPTION
- DC Current Gain -hFE = 30(Min)@ IC= 0.3A
- Collector-Emitter Sustaining Voltage- : V CEO(SUS) = 40V(Min)- BDT41F; 60V(Min)- BDT41AF 80V(Min)- BDT41BF; 100V(Min)- BDT41CF
- Complement to Type BDT42F/AF/BF/CF
APPLICATIONS
- Designed for use in general purpose amplifer and switching
ABSOLUTE MAXIMUM RATINGS(T =25℃a ) SYMBOL PARAMETER VALUE UNIT BDT41F 80 BDT41AF 100 BDT41BF 120 VCBO Collector-Base Voltage BDT41CF 140 V BDT41F 40 BDT41AF 60 BDT41BF 80 VCEO Collector-Emitter Voltage BDT41CF 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 10 A IB B Base Current 3 A PC Collector Power Dissipation TC=25℃ 32 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 6.3 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BDT41F/AF/BF/CF
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDT41F 40 BDT41AF 60 BDT41BF 80 VCEO(SUS) Collector-Emitter Sustaining Voltage BDT41CF IC= 30mA; IB= 0 100 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 0.6A B 1.5 V VBE(on) Base-Emitter On Voltage IC= 6A ; VCE= 4V 2.0 V ICES Collector Cutoff Current VCE= VCEOmax; VBE= 0 0.4 mA BDT41F/AF VCE= 30V; IB= 0 B ICEO Collector Cutoff Current BDT41BF/CF VCE= 60V; IB= 0 B 0.2 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 0.5 mA hFE-1 DC Current Gain IC= 0.3A ; VCE= 4V 30 hFE-2 DC Current Gain IC= 3A ; VCE= 4V 15 75 fT Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 10V 3 MHz Switching Times ton Turn-On Time 0.6 μs toff Turn-Off Time IC= 6A; IB1= -IB2= 0.6A 1.0 μs isc Website：www.iscsemi.cn