BDT41 ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BDT41/A/B/C
DESCRIPTION
- DC Current Gain -hFE = 30(Min)@ IC= 0.3A
- Collector-Emitter Sustaining Voltage- : V CEO(SUS) = 40V(Min)- BDT41; 60V(Min)- BDT41A 80V(Min)- BDT41B; 100V(Min)- BDT41C
- Complement to Type BDT42/42A/42B/42C
APPLICATIONS
- Designed for use in general purpose amplifer and switching
ABSOLUTE MAXIMUM RATINGS(T =25℃a ) SYMBOL PARAMETER VALUE UNIT BDT41 80 BDT41A 100 BDT41B 120 VCBO Collector-Base Voltage BDT41C 140 V BDT41 40 BDT41A 60 BDT41B 80 VCEO Collector-Emitter Voltage BDT41C 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 10 A IB B Base Current 3 A PC Collector Power Dissipation TC=25℃ 65 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.92 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 70 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BDT41/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDT41 40 BDT41A 60 BDT 41B 80 VCEO(SUS) Collector-Emitter Sustaining Voltage BDT 41C IC= 30mA; IB= 0 100 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 0.6A B 1.5 V VBE(on) Base-Emitter On Voltage IC= 6A ; VCE= 4V 2.0 V ICES Collector Cutoff Current VCE= VCEOmax; VBE= 0 0.4 mA BDT41/A VCE= 30V; IB= 0 B ICEO Collector Cutoff Current BDT41B/C VCE= 60V; IB= 0 B 0.2 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 0.5 mA hFE-1 DC Current Gain IC= 0.3A ; VCE= 4V 30 hFE-2 DC Current Gain IC= 3A ; VCE= 4V 15 75 fT Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 10V 3 MHz Switching Times ton Turn-On Time 0.6 μs toff Turn-Off Time IC= 6A; IB1= -IB2= 0.6A 1.0 μs isc Website：www.iscsemi.cn