BDT32F ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BDT32F/AF/BF/CF/DF
DESCRIPTION
- DC Current Gain -hFE = 25(Min)@ IC= -1.0A
- Collector-Emitter Sustaining Voltage- : V CEO(SUS) = -40V(Min)- BDT32F; -60V(Min)- BDT32AF -80V(Min)- BDT32BF; -100V(Min)- BDT32CF -120V(Min)- BDT32DF
- Complement to Type BDT31F/AF/BF/CF/DF
APPLICATIONS
- Designed for use in audio amplifier output stages , general purpose amplifier and high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDT32F -80 BDT32AF -100 BDT32BF -120 BDT32CF -140 VCBO Collector-Base Voltage BDT32DF -160 V BDT32F -40 BDT32AF -60 BDT32BF -80 BDT32CF -100 VCEO Collector-Emitter Voltage BDT32DF -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak -5 A IB B Base Current -1 A PC Collector Power Dissipation TC=25℃ 22 W Tj Junction Temperature 150 ℃ Tstg Storage Ttemperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 8.12 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 55 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BDT32F/AF/BF/CF/DF
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDT32F -40 BDT32AF -60 BDT32BF -80 BDT32CF -100 VCEO(SUS) Collector-Emitter Sustaining Voltage BDT32DF IC= -30mA; IB= 0 -120 V BDT32F/AF/BF/CF IC= -3A; IB= -0.375A B -1.2 VCE(sat) Collector-Emitter Saturation Voltage BDT32DF IC= -3A; IB= -0.75A B -2.5 V VBE(on) Base-Emitter On Voltage IC= -3A ; VCE= -4V -1.8 V ICES Collector Cutoff Current VCE= VCEOmax; VBE= 0 -0.2 mA BDT32F/AF VCE= -30V; IB= 0 B BDT32BF/CF VCE= -60V; IB= 0 BICEO Collector Cutoff Current BDT32DF VCE= -90V; IB= 0 B -0.1 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -0.2 mA hFE-1 DC Current Gain IC= -1A ; VCE= -4V 25 BDT32F/AF/BF/CF 10 50 hFE-2 DC Current Gain BDT32DF IC= -3A ; VCE= -4V fT Current-Gain—Bandwidth Product IC= -0.5A ; VCE= -10V 3 MHz Switching Times ton Turn-On Time 0.3 μs toff Turn-Off Time IC= -1.0A; IB1= -IB2= -0.1A 1.0 μs isc Website：www.iscsemi.cn