BDT31F ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BDT31F/AF/BF/CF/DF
DESCRIPTION
- DC Current Gain -hFE = 25(Min)@ IC= 1.0A
- Collector-Emitter Sustaining Voltage- : V CEO(SUS) = 40V(Min)- BDT31F; 60V(Min)- BDT31AF 80V(Min)- BDT31BF; 100V(Min)- BDT31CF 120V(Min)- BDT31DF
- Complement to Type BDT32F/AF/BF/CF/DF
APPLICATIONS
- Designed for use in audio amplifier output stages , general purpose amplifier and high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDT31F 80 BDT31AF 100 BDT31BF 120 BDT31CF 140 VCBO Collector-Base Voltage BDT31DF 160 V BDT31F 40 BDT31AF 60 BDT31BF 80 BDT31CF 100 VCEO Collector-Emitter Voltage BDT31DF 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 5 A IB B Base Current 1 A PC Collector Power Dissipation TC=25℃ 22 W Tj Junction Temperature 150 ℃ Tstg Storage Ttemperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 8.12 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 55 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BDT31F/AF/BF/CF/DF
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDT31F 40 BDT31AF 60 BDT31BF 80 BDT31CF 100 VCEO(SUS) Collector-Emitter Sustaining Voltage BDT31DF IC= 30mA; IB= 0 120 V BDT31F/AF/BF/CF IC= 3A; IB= 0.375A B 1.2 VCE(sat) Collector-Emitter Saturation Voltage BDT31DF IC= 3A; IB= 0.75A B 2.5 V VBE(on) Base-Emitter On Voltage IC= 3A ; VCE= 4V 1.8 V ICES Collector Cutoff Current VCE= VCEOmax; VBE= 0 0.2 mA BDT31F/AF VCE= 30V; IB= 0 B BDT31BF/CF VCE= 60V; IB= 0 BICEO Collector Cutoff Current BDT31DF VCE= 90V; IB= 0 B 0.1 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 0.2 mA hFE-1 DC Current Gain IC=1A ; VCE= 4V 25 BDT31F/AF/BF/CF 10 50 hFE-2 DC Current Gain BDT31DF IC= 3A ; VCE= 4V fT Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 10V 3 MHz Switching Times ton Turn-On Time 0.3 μs toff Turn-Off Time IC= 1.0A; IB1= -IB2= 0.1A 1.0 μs isc Website：www.iscsemi.cn