BDT31 ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BDT31/A/B/C
DESCRIPTION
- DC Current Gain -hFE = 25(Min)@ IC= 1.0A
- Collector-Emitter Sustaining Voltage- : V CEO(SUS) = 40V(Min)- BDT31; 60V(Min)- BDT31A 80V(Min)- BDT31B; 100V(Min)- BDT31C
- Complement to Type BDT32/A/B/C
APPLICATIONS
- Designed for use in audio output stages and general amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDT31 80 BDT 31A 100 BDT 31B 120 VCBO Collector-Base Voltage BDT 31C 140 V BDT31 40 BDT 31A 60 BDT 31B 80 VCEO Collector-Emitter Voltage BDT 31C 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 5 A IB B Base Current 1 A PC Collector Power Dissipation TC=25℃ 40 W Tj Junction Temperature 150 ℃ Tstg Storage Ttemperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.12 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 70 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BDT31/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDT31 40 BDT 31A 60 BDT 31B 80 VCEO(SUS) Collector-Emitter Sustaining Voltage BDT 31C IC= 30mA; IB= 0 100 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.375A B 1.2 V VBE(on) Base-Emitter On Voltage IC= 3A ; VCE= 4V 1.8 V ICES Collector Cutoff Current VCE= VCEOmax; VBE= 0 0.2 mA BDT31/A VCE= 30V; IB= 0 B ICEO Collector Cutoff Current BDT31B/C VCE= 60V; IB= 0 B 0.1 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 0.2 mA hFE-1 DC Current Gain IC= 1A ; VCE= 4V 25 hFE-2 DC Current Gain IC= 3A ; VCE= 4V 10 50 fT Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 10V 3 MHz Switching Times ton Turn-On Time 0.3 μs toff Turn-Off Time IC= 1.0A; IB1= -IB2= 0.1A 1.0 μs isc Website：www.iscsemi.cn