BDT30F ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BDT30F/AF/BF/CF/DF
DESCRIPTION
- DC Current Gain -hFE = 40(Min)@ IC= -0.4A
- Collector-Emitter Sustaining Voltage- : V CEO(SUS) = -40V(Min)- BDT30F; -60V(Min)- BDT30AF -80V(Min)- BDT30BF; -100V(Min)- BDT30CF -120V(Min)- BDT30DF
- Complement to Type BDT29F/AF/BF/CF/DF
APPLICATIONS
- Designed for use in audio output stages , general purpose amplifier and high spee d switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDT30F -80 BDT30AF -100 BDT30BF -120 BDT30CF -140 VCBO Collector-Base Voltage BDT30DF -160 V BDT30F -40 BDT30AF -60 BDT30BF -80 BDT30CF -100 VCEO Collector-Emitter Voltage BDT30DF -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1 A ICM Collector Current-Peak -3 A IB B Base Current -0.4 A PC Collector Power Dissipation TC=25℃ 19 W Tj Junction Temperature 150 ℃ Tstg Storage Ttemperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 9.17 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 55 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BDT30F/AF/BF/CF/DF
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDT30F -40 BDT30AF -60 BDT30BF -80 BDT30CF -100 VCEO(SUS) Collector-Emitter Sustaining Voltage BDT30DF IC= -30mA; IB= 0 -120 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.125A B -0.7 V VBE(on) Base-Emitter On Voltage IC= -1A ; VCE= -4V -1.3 V ICES Collector Cutoff Current VCE= VCEOmax; VBE= 0 -0.2 mA BDT30F/AF VCE= -30V; IB= 0 B BDT30BF/CF VCE= -60V; IB= 0 BICEO Collector Cutoff Current BDT30DF VCE= -90V; IB= 0 B -0.1 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -0.2 mA hFE-1 DC Current Gain IC= -0.2A ; VCE= -4V 40 hFE-2 DC Current Gain IC= -1A ; VCE= -4V 15 75 fT Current-Gain—Bandwidth Product IC= -0.2A ; VCE= -10V 3 MHz Switching Times ton Turn-On Time 0.3 μs toff Turn-Off Time IC= -1.0A; IB1= -IB2= -0.1A 1.0 μs isc Website：www.iscsemi.cn