BDT30 ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BDT30/A/B/C
DESCRIPTION
- DC Current Gain -hFE = 40(Min)@ IC= -0.4A
- Collector-Emitter Sustaining Voltage- : V CEO(SUS) = -40V(Min)- BDT30; -60V(Min)- BDT30A -80V(Min)- BDT30B; -100V(Min)- BDT30C
- Complement to Type BDT29/A/B/C
APPLICATIONS
- Designed for use in output stages of audio and television amplifier circuits where high peak powers can occur. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDT30 -80 BDT30A -100 BDT30B -120 VCBO Collector-Base Voltage BDT30C -140 V BDT30 -40 BDT30A -60 BDT30B -80 VCEO Collector-Emitter Voltage BDT30C -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1 A ICM Collector Current-Peak -3 A IB B Base Current -0.4 A PC Collector Power Dissipation TC=25℃ 30 W Tj Junction Temperature 150 ℃ Tstg Storage Ttemperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 4.17 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 70 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BDT30/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDT30 -40 BDT30A -60 BDT30B -80 VCEO(SUS) Collector-Emitter Sustaining Voltage BDT30C IC= -30mA; IB= 0 -100 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.125A B -0.7 V VBE(on) Base-Emitter On Voltage IC= -1A ; VCE= -4V -1.3 V ICES Collector Cutoff Current VCE= VCEOmax; VBE= 0 -0.2 mA BDT30/A VCE= -30V; IB= 0 B ICEO Collector Cutoff Current BDT30B/C VCE= -60V; IB= 0 B -0.1 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -0.2 mA hFE-1 DC Current Gain IC= -0.2A ; VCE= -4V 40 hFE-2 DC Current Gain IC= -1A ; VCE= -4V 15 75 fT Current-Gain—Bandwidth Product IC= -0.2A ; VCE= -10V 3 MHz Switching Times ton Turn-On Time 0.3 μs toff Turn-Off Time IC= -1.0A; IB1= -IB2= -0.1A 1.0 μs isc Website：www.iscsemi.cn