BDT29F ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BDT29F/AF/BF/CF/DF
DESCRIPTION
- DC Current Gain -hFE = 40(Min)@ IC= 0.4A
- Collector-Emitter Sustaining Voltage- : V CEO(SUS) = 40V(Min)- BDT29F; 60V(Min)- BDT29AF 80V(Min)- BDT29BF; 100V(Min)- BDT29CF 120V(Min)- BDT29DF
- Complement to Type BDT30F/AF/BF/CF/DF
APPLICATIONS
- Designed for use in audio output stages , general purpose amplifier and high spee d switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDT29F 80 BDT29AF 100 BDT29BF 120 BDT29CF 140 VCBO Collector-Base Voltage BDT29DF 160 V BDT29F 40 BDT29AF 60 BDT29BF 80 BDT29CF 100 VCEO Collector-Emitter Voltage BDT29DF 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1 A ICM Collector Current-Peak 3 A IB B Base Current 0.4 A PC Collector Power Dissipation TC=25℃ 19 W Tj Junction Temperature 150 ℃ Tstg Storage Ttemperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 9.17 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 55 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BDT29F/AF/BF/CF/DF
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDT29F 40 BDT29AF 60 BDT29BF 80 BDT29CF 100 VCEO(SUS) Collector-Emitter Sustaining Voltage BDT29DF IC= 30mA; IB= 0 120 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.125A B 0.7 V VBE(on) Base-Emitter On Voltage IC= 1A ; VCE= 4V 1.3 V ICES Collector Cutoff Current VCE= VCEOmax; VBE= 0 0.2 mA BDT29F/AF VCE= 30V; IB= 0 B BDT29BF/CF VCE= 60V; IB= 0 BICEO Collector Cutoff Current BDT29DF VCE= 90V; IB= 0 B 0.1 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 0.2 mA hFE-1 DC Current Gain IC= 0.2A ; VCE= 4V 40 hFE-2 DC Current Gain IC= 1A ; VCE= 4V 15 75 fT Current-Gain—Bandwidth Product IC= 0.2A ; VCE= 10V 3 MHz Switching Times ton Turn-On Time 0.3 μs toff Turn-Off Time IC= 1.0A; IB1= -IB2= 0.1A 1.0 μs isc Website：www.iscsemi.cn