BDT29 ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BDT29/A/B/C
DESCRIPTION
- DC Current Gain -hFE = 40(Min)@ IC= 0.4A
- Collector-Emitter Sustaining Voltage- : V CEO(SUS) = 40V(Min)- BDT29; 60V(Min)- BDT29A 80V(Min)- BDT29B; 100V(Min)- BDT29C
- Complement to Type BDT30/A/B/C
APPLICATIONS
- Designed for use in output stages of audio and television amplifier circuits where high peak powers can occur. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDT29 80 BDT29A 100 BDT29B 120 VCBO Collector-Base Voltage BDT29C 140 V BDT29 40 BDT29A 60 BDT29B 80 VCEO Collector-Emitter Voltage BDT29C 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1 A ICM Collector Current-Peak 3 A IB B Base Current 0.4 A PC Collector Power Dissipation TC=25℃ 30 W Tj Junction Temperature 150 ℃ Tstg Storage Ttemperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 4.17 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 70 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BDT29/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDT29 40 BDT29A 60 BDT29B 80 VCEO(SUS) Collector-Emitter Sustaining Voltage BDT29C IC= 30mA; IB= 0 100 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.125A B 0.7 V VBE(on) Base-Emitter On Voltage IC= 1A ; VCE= 4V 1.3 V ICES Collector Cutoff Current VCE= VCEOmax; VBE= 0 0.2 mA BDT29/A VCE= 30V; IB= 0 B ICEO Collector Cutoff Current BDT29B/C VCE= 60V; IB= 0 B 0.1 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 0.2 mA hFE-1 DC Current Gain IC= 0.2A ; VCE= 4V 40 hFE-2 DC Current Gain IC= 1A ; VCE= 4V 15 75 fT Current-Gain—Bandwidth Product IC= 0.2A ; VCE= 10V 3 MHz Switching Times ton Turn-On Time 0.3 μs toff Turn-Off Time IC= 1.0A; IB1= -IB2= 0.1A 1.0 μs isc Website：www.iscsemi.cn