BDS12 ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
NCHANGE Semiconductor iscProductSpecification isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 iscSiliconNPNPowerTransistor BDS12
DESCRIPTION
- HighVoltage: VCEV=100V(Min)
- LowSaturation Voltage- :VCE(sat)=1.0V(Max)@ IC=5A
- High Reliablity
APPLICATIONS
- Designedforpower linearand switching applicationand Generalpueposepower. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage 100 V VCEV Collector-EmitterVoltage 100 V VCEO Collector-EmitterVoltage 100 V VEBO Emitter-BaseVoltage 5 V IC CollectorCurrent-Continuous 15 A IB BaseCurrent 5 A PC CollectorPowerDissipation @TC=25℃ 90 W TJ JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -65~150 ℃ THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase 1.4 ℃/W Rthj-a ThermalResistance,JunctiontoAmbient 80 ℃/W
NCHANGE Semiconductor iscProductSpecification isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 iscSiliconNPNPowerTransistor BDS12 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-EmitterSustainingVoltage IC=50mA;IB=0 100 V VCE(sat)-1 Collector-EmitterSaturationVoltage IC=5A;IB=0.5A 1.0 V VCE(sat)-2 Collector-EmitterSaturationVoltage IC=10A;IB=2.5A 3.0 V VBE(sat) Base-EmitterSaturationVoltage IC=10A;IB=2.5A 2.5 V ICBO CollectorCutoffCurrent VCE=100V;VBE=0 0.5 mA ICEO CollectorCutoffCurrent VCE=50V;VBE=0 1.0 mA IEBO EmitterCutoffCurrent VEB=5V;IC=0 1.0 mA hFE-1 DCCurrentGain IC=0.5A;VCE=4V 40 250 hFE-2 DCCurrentGain IC=5A;VCE=4V 15 150 hFE-3 DCCurrentGain IC=10A;VCE=4V 5 fT Current-Gain—BandwidthProduct IC=0.5A;VCE=4V 3 MHz