BDP949 ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(free datasheet download site)
- PDF pages: 3
Technical content
iscSiliconNPNPowerTransistor www.iscsemi.com 2023-10-101
DESCRIPTION
- Collector-EmitterBreakdown Voltage -V(BR)CEO=45V(Min)
- ForAFdriverand outputstages
- High collectorcurrent
APPLICATIONS
- Designedforpower amplifier
- highspeed switching andregulatedpower supplyapplications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage 60 V VCEO Collector-EmitterVoltage 60 V VEBO Emitter-BaseVoltage 5 V IC CollectorCurrent-Continuous 3 A ICM Peakcollectorcurrent 5 A IB Basecurrent 200 mA PC CollectorPowerDissipation 3 W TJ JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -65~150 ℃
iscSiliconNPNPowerTransistor www.iscsemi.com 2023-10-102 ELECTRICALCHARACTERISTICS （TC=25℃ unlessotherwise specified） SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)EBO Emitter-BaseBreakdownVoltage IE=10uA;IC= 0 5 -- V V(BR)CEO Collector-EmitterBreakdownVoltage IC=10mA;IB= 0 60 -- V V(BR)CBO Collector-BaseBreakdownVoltage IC=100uA;IE= 0 60 -- V ICBO CollectorCutoff Current VCB =60V;IE= 0 -- 100 nA IEBO EmitterCutoff Current VEB =4V;IC= 0 -- 100 nA VCEsat Collector-emittersaturationvoltage IC =2A,IB =0.2A -- 0.5 V VBEsat Base-emittersaturationvoltage IC =2A,IB =0.2A -- 1.3 V hFE DCCurrentGain IC=10mA;VCE=5V 25 -- hFE DCCurrentGain IC=500mA;VCE=1V 85 475 hFE DCCurrentGain IC=1A;VCE=2V 50 -- PackageDimensions
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