BD952 ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD952
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V (BR)CEO= -80V(Min)
- DC Current Gain- : h FE= 40(Min)@ IC= -500mA
- Complement to Type BD951
APPLICATIONS
- Designed for power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak -8 A PC Collector Power Dissipation @ TC=25℃ 40 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.12 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 70 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD952
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA ; IB= 0 -80 V V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA ; IE= 0 -80 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA ; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A B -1.0 V VBE(on) Base-Emitter On Voltage IC= -2A; VCE= -4V -1.4 V VCB= -80V; IE= 0 -50 μA ICBO Collector Cutoff Current VCB= -40V; IE= 0,TJ=150℃ -1.0 mA ICEO Collector Cutoff Current VCE= -40V; IB= 0 B -0.1 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -0.2 mA hFE-1 DC Current Gain IC= -500mA ; VCE= -4V 40 hFE-2 DC Current Gain IC= -2A ; VCE= -4V 20 fT Current-Gain—Bandwidth Product IC= -500mA ; VCE= -4V 3 MHz Switching Times ton Turn-On Time 0.1 μs toff Turn-Off Time IC= -1.0A; IB1= -IB2= -0.1A; VCC= -20V; RL= 20Ω 0.4 μs isc Website：www.iscsemi.cn 2